Photoluminescence of Rare-earth ( Eu3+ 、Pr3+ 、Nd3+ 、Er3+ )Doped Bi4Ge3O12 Crystals

JOURNAL OF SYNTHETIC CRYSTALS ›› 2011, Vol. 40 ›› Issue (4): 862-866.

Previous Articles Next Articles

Photoluminescence of Rare-earth ( Eu3+ 、Pr3+ 、Nd3+ 、Er3+ )Doped Bi4Ge3O12 Crystals

WANG Ya-fang;ZHANG Hao;WU Xing-yan;WU Zheng-long

Online:2011-08-15 Published:2021-01-20

Abstract

CLC Number:

TN304.054

WANG Ya-fang;ZHANG Hao;WU Xing-yan;WU Zheng-long. Photoluminescence of Rare-earth ( Eu3+ 、Pr3+ 、Nd3+ 、Er3+ )Doped Bi4Ge3O12 Crystals[J]. Journal of Synthetic Crystals, 2011, 40(4): 862-866.

[1]	ZHANG Na-na;HAN Shu-juan;GAO Wen-lan;ZHANG Huai-jin;WANG Ji-yang. Growth and Low-temperature Raman Spectra Study of Ca0.4Ba0.6Nb2O6 Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2011, 40(5): 1093-1096.
[2]	XU Qing-an;ZHANG Jing-wen;YANG Xiao-dong;JU Kai-ru;HE Yong-ning;HOU Xun. Effect of Growth Temperature on the Properties of ZnO Thin Films Prepared by Laser Molecular Beam Epitaxy [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2006, 35(2): 248-252.
[3]	ZHANG Guan-jie;SHU Yong-chun;PI Biao;YAO Jiang-hong;LIN Yao-wang;SHU Qiang;LIU Ru-bin;WANG Zhan-guo;XU Jing-jun. Reflectance Spectrum Simulation and Optimized Growth of AlAs/GaAs Distributed Bragg Reflector (DBR) [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2005, 34(6): 977-981.
[4]	. Growth,Surface Morphology and Defects of KBe2(BO3)F2 Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2003, 32(1): 8-12.
[5]	. Growth of Self-assembled InAs Quantum Dots Emitting at 1.55μm [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2002, 31(5): 464-467.

Photoluminescence of Rare-earth ( Eu3+ 、Pr3+ 、Nd3+ 、Er3+ )Doped Bi4Ge3O12 Crystals

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 5

Recommended Articles

Metrics

Comments