Numerical Simulation of Polysilicon Rods'Growth Environment in Siemens CVD Reactor

JOURNAL OF SYNTHETIC CRYSTALS ›› 2012, Vol. 41 ›› Issue (2): 507-512.

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Numerical Simulation of Polysilicon Rods'Growth Environment in Siemens CVD Reactor

WANG Zi-song;HUANG Zhi-jun;QIN Pan;LEI Li-guang;YIN Yong-xiang;DAI Xiao-yan

Online:2012-04-15 Published:2021-01-20

Abstract

CLC Number:

TQ018

WANG Zi-song;HUANG Zhi-jun;QIN Pan;LEI Li-guang;YIN Yong-xiang;DAI Xiao-yan. Numerical Simulation of Polysilicon Rods'Growth Environment in Siemens CVD Reactor[J]. Journal of Synthetic Crystals, 2012, 41(2): 507-512.

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Numerical Simulation of Polysilicon Rods'Growth Environment in Siemens CVD Reactor

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