Mechanism and Experiment on Lapping SiC Single Crystal Wafer

JOURNAL OF SYNTHETIC CRYSTALS ›› 2013, Vol. 42 ›› Issue (10): 2065-2070.

Previous Articles Next Articles

Mechanism and Experiment on Lapping SiC Single Crystal Wafer

LI Shu-juan;HU Hai-ming;LI Yan;GAO Xin-qin

Published:2021-01-20

Abstract

CLC Number:

TG580

LI Shu-juan;HU Hai-ming;LI Yan;GAO Xin-qin. Mechanism and Experiment on Lapping SiC Single Crystal Wafer[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2013, 42(10): 2065-2070.

[1]	WU Yu-hou;WANG Hao;LI Song-hua;WANG He;SUN Jian;WANG Ding-wen. Experimental Study on Grinding Force and Temperature of HIPSN Ceramics [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2019, 48(8): 1527-1533.
[2]	LIN Zhi-fu;GAO Shang;KANG Ren-ke;WANG Zi-guang;GENG Zong-chao. Research on Grinding Performance of Fixed-abrasive Diamond Lapping Plates for Sapphire Substrates [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2016, 45(5): 1317-1322.
[3]	DAI Zi-hua;ZHU Yong-wei;WANG Jia-shun;XIAO Ren-jie;ZHU Lin;LI Jun. Effect of Grit Size on the Sub-surface Damage of Work-piece Lapped by FAP [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2015, 44(11): 2970-2977.
[4]	XIAO Qiang. Research on the Material Removal Rates and Surface Features of SiC Single Crystal by Ultrasonic Polishing [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2011, 40(2): 496-499.

Mechanism and Experiment on Lapping SiC Single Crystal Wafer

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 4

Recommended Articles

Metrics

Comments