Effects of Temperature Rising Program on the Graphitization of Seed Crystal during the Initial Growth of 6H-SiC Crystal

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2013, Vol. 42 ›› Issue (5): 847-850.

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Effects of Temperature Rising Program on the Graphitization of Seed Crystal during the Initial Growth of 6H-SiC Crystal

LIU Xi;GAO Pan;YAN Cheng-feng;KONG Hai-kuan;XIN Jun;CHEN Jian-jun;SHI Er-wei

Online:2013-05-15 Published:2021-01-20

Abstract

CLC Number:

TB321

LIU Xi;GAO Pan;YAN Cheng-feng;KONG Hai-kuan;XIN Jun;CHEN Jian-jun;SHI Er-wei. Effects of Temperature Rising Program on the Graphitization of Seed Crystal during the Initial Growth of 6H-SiC Crystal[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2013, 42(5): 847-850.

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Effects of Temperature Rising Program on the Graphitization of Seed Crystal during the Initial Growth of 6H-SiC Crystal

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