| [1] |
LUO Xiaohang, XU Guangyu, LI Lijun, ZHANG Yongkang, ZHANG Yachen, WU Haiping, AN Kang.
Comparison on Three-Point-Bending Fracture Toughness of Free-Standing Diamond Thick Films from Three Directions
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(12): 2085-2093.
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| [2] |
LIU Shuaiwei, GUAN Chunlong, LU Yunxiang, YI Jian, JIANG Nan, KAZUHITO Nishimura.
Efficient Polishing Process of Diamond in Oxygen-Enriched Environment and Its Material Removal Mechanism
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(12): 2094-2103.
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| [3] |
XIAO Hongyu, LI Yong, TIAN Changhai, ZHANG Weixi, WANG Qiang, XIAO Zhengguo, WANG Ying, JIN Hui, BAO Zhigang, ZHOU Zhenxiang.
Study on the Growth of Type-Ib Diamond Single Crystal and the Temperature Field Distribution in the Synthesis Cavities
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(6): 959-966.
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| [4] |
SUN Xinghan, LI Jihu, ZHANG Wei, ZENG Qunfeng, ZHANG Junfeng.
Research Progress on Material Removal Non-Uniformity in Silicon Carbide Chemical Mechanical Polishing
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(4): 585-599.
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| [5] |
ZHANG Yalin, AN Xiaoming, GE Xingang, JIANG Long, LI Yifeng.
Thermal Conductivity Test of Large-Size Diamond by Laser Flash Method
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(3): 503-510.
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| [6] |
HAO Jinglin, DENG Lifen, WANG Kaiyue, SONG Hui, JIANG Nan, KAZUHITO Nishimura.
Synthesis of Doped Diamond by High-Pressure and High-Temperature: a Review
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(2): 194-209.
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| [7] |
LI Guofeng, CHEN Hongyu, HANG Wei, HAN Xuefeng, YUAN Julong, PI Xiaodong, YANG Deren, WANG Rong.
Research Progress on Surface/Subsurface Damages of 4H Silicon Carbide Wafers
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(11): 1907-1921.
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| [8] |
HU Tingting, MU Lianxi, WANG Peng, TU Juping, LIU Jinlong, CHEN Liangxian, ZHANG Jianjun, OUYANG Xiaoping, LI Chengming.
Preparation and Characterization of Single Crystal Diamond with High Purity and Low Dislocation Density
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(11): 1931-1938.
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| [9] |
QIAO Pengfei, LIU Kang, DAI Bing, LIU Benjian, ZHANG Sen, ZHANG Xiaohui, ZHU Jiaqi.
Research Progress on Energy Band Structure and Physical Properties of Terminated Diamond
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 945-959.
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| [10] |
JIAN Xiaogang, ZHANG Yi, LIANG Xiaowei, YAO Wenshan.
Growth Sites of Sulfur and Selenium Doped Diamond Surface
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 1120-1127.
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| [11] |
WU Ruiwen, SONG Huaping, YANG Junwei, QU Hongxia, LAI Xiaofang.
Grinding Properties of 4H-SiC Single Crystal Substrate Using Polyurethane Pad
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 759-765.
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| [12] |
LU Jiazheng, ZHANG Hui, ZHENG Lili, MA Yuan.
Modeling and Numerical Simulation of Heat-Mass Transport Process for Large-Size Silicon Carbide Crystal Growth
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(4): 550-561.
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| [13] |
LI Bin, HU Xiufei, YANG Yiqiu, WANG Yingnan, XIE Xuejian, PENG Yan, YANG Xianglong, WANG Xiwei, HU Xiaobo, XU Xiangang, FENG Zhihong.
Anharmonic Phonon Decay Effect of Single Crystal Diamond
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(3): 442-451.
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| [14] |
JIA Yuanbo, MAN Weidong, WU Zhengxin, LIANG Kai, LIN Zhidong.
Effect of Carbon Dioxide on Internal Stress of Single Crystal Diamond Grown by Homogeneous Epitaxy
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(1): 34-40.
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| [15] |
WANG Yu, GU Peng, FU Jun, WANG Penggang, LEI Pei, YUAN Li.
Research Progress on the Growth of 4H-SiC Crystal by PVT Method and the Defect of Polytype Inclusions
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(12): 2137-2152.
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