Effect of the Oxygen Partial Pressure on Properties of Indium Gallium Zinc Oxide Thin Film Transistors

JOURNAL OF SYNTHETIC CRYSTALS ›› 2014, Vol. 43 ›› Issue (12): 3108-3112.

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Effect of the Oxygen Partial Pressure on Properties of Indium Gallium Zinc Oxide Thin Film Transistors

LIU Yuan-yuan;TONG Yang;WANG Xue-xia;WANG Kun-lun;SONG Shu-mei;YANG Tian-lin

Online:2014-12-15 Published:2021-01-20

Abstract

CLC Number:

TN321+.5

LIU Yuan-yuan;TONG Yang;WANG Xue-xia;WANG Kun-lun;SONG Shu-mei;YANG Tian-lin. Effect of the Oxygen Partial Pressure on Properties of Indium Gallium Zinc Oxide Thin Film Transistors[J]. Journal of Synthetic Crystals, 2014, 43(12): 3108-3112.

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Effect of the Oxygen Partial Pressure on Properties of Indium Gallium Zinc Oxide Thin Film Transistors

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