Simulation on Effect of Heat Shield Position on the V/G and Point Defect and Thermal Stress of Gzochralski Silicon

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2014, Vol. 43 ›› Issue (4): 771-777.

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Simulation on Effect of Heat Shield Position on the V/G and Point Defect and Thermal Stress of Gzochralski Silicon

ZHANG Xiang-yu;GUAN Xiao-jun;PAN Zhong-ben;ZHANG Huai-jin;ZENG Qing-kai;WANG Jin

Online:2014-04-15 Published:2021-01-20

Abstract

CLC Number:

O77

ZHANG Xiang-yu;GUAN Xiao-jun;PAN Zhong-ben;ZHANG Huai-jin;ZENG Qing-kai;WANG Jin. Simulation on Effect of Heat Shield Position on the V/G and Point Defect and Thermal Stress of Gzochralski Silicon[J]. Journal of Synthetic Crystals, 2014, 43(4): 771-777.

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Simulation on Effect of Heat Shield Position on the V/G and Point Defect and Thermal Stress of Gzochralski Silicon

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