High Resolution X-ray Diffraction Analysis of GaN Epitaxial Layer Grown on SiC Substrate

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2014, Vol. 43 ›› Issue (5): 1017-1022.

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High Resolution X-ray Diffraction Analysis of GaN Epitaxial Layer Grown on SiC Substrate

YU Guo-jian;XU Ming-sheng;HU Xiao-bo;XU Xian-gang

Online:2014-05-15 Published:2021-01-20

Abstract

CLC Number:

O484.4

YU Guo-jian;XU Ming-sheng;HU Xiao-bo;XU Xian-gang. High Resolution X-ray Diffraction Analysis of GaN Epitaxial Layer Grown on SiC Substrate[J]. Journal of Synthetic Crystals, 2014, 43(5): 1017-1022.

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High Resolution X-ray Diffraction Analysis of GaN Epitaxial Layer Grown on SiC Substrate

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