Numerical Simulation on the Effect of the Rotating on the Heat Transfer and Melt Flow during the Silicon Crystal Growth Process by Cz Method

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2015, Vol. 44 ›› Issue (1): 31-37.

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Numerical Simulation on the Effect of the Rotating on the Heat Transfer and Melt Flow during the Silicon Crystal Growth Process by Cz Method

JIN Chao-hua;ZHU Tong

Online:2015-01-15 Published:2021-01-20

Abstract

CLC Number:

TN304.1

JIN Chao-hua;ZHU Tong. Numerical Simulation on the Effect of the Rotating on the Heat Transfer and Melt Flow during the Silicon Crystal Growth Process by Cz Method[J]. Journal of Synthetic Crystals, 2015, 44(1): 31-37.

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Numerical Simulation on the Effect of the Rotating on the Heat Transfer and Melt Flow during the Silicon Crystal Growth Process by Cz Method

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