Study on the Crystallization Properties of Poly-Si Films Induced Crystallization by Ge Capping Layer

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2015, Vol. 44 ›› Issue (2): 420-424.

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Study on the Crystallization Properties of Poly-Si Films Induced Crystallization by Ge Capping Layer

DENG Shu-kang;DONG Guo-jun;YANG Xiao-kun;LIU Hong-xia;HOU De-dong;LI Ming

Online:2015-02-15 Published:2021-01-20

Abstract

CLC Number:

TM914.4

DENG Shu-kang;DONG Guo-jun;YANG Xiao-kun;LIU Hong-xia;HOU De-dong;LI Ming. Study on the Crystallization Properties of Poly-Si Films Induced Crystallization by Ge Capping Layer[J]. Journal of Synthetic Crystals, 2015, 44(2): 420-424.

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Study on the Crystallization Properties of Poly-Si Films Induced Crystallization by Ge Capping Layer

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