Study on Carrier Concentration Distribution in Silicon-doped GaAs Materials Using Electrochemical C-V Technique

JOURNAL OF SYNTHETIC CRYSTALS ›› 2016, Vol. 45 ›› Issue (9): 2347-2351.

Study on Carrier Concentration Distribution in Silicon-doped GaAs Materials Using Electrochemical C-V Technique

XU Ji-ping;CHENG Feng-ling

Online:2016-09-15 Published:2021-01-20

Abstract

CLC Number:

O484.5

XU Ji-ping;CHENG Feng-ling. Study on Carrier Concentration Distribution in Silicon-doped GaAs Materials Using Electrochemical C-V Technique[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2016, 45(9): 2347-2351.

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Study on Carrier Concentration Distribution in Silicon-doped GaAs Materials Using Electrochemical C-V Technique

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