Abstract: Zirconium silicate thin film was prepared via sol-gel method using zirconium oxychloide as zirconium source and tetraethyl orthosilicate as silicon source.The effects of hydrogen peroxide (H2O2)on the preparation of zirconium silicate film and the corrosion resistance of zirconium silicate film were investigated by means of SEM,DTA-TG,FT-IR and XRD,respectively.The results show that appropriate hydrogen peroxide effectively accelerates the hydrolysis of the zirconium oxychloide and overcomes the holes and poor densification caused by weight loss at high temperature.When the mole ratio of H2O2/Zr is less than 2,uniform and dense film can not be prepared.However,impurity phase appears when the mole ratio of H2O2/Zr is more than 2.Uniform and dense zirconium silicate thin film could be prepared when the optimal mole ratio of H2O2/Zr is 2.The thin film has excellent corrosion resistance against NaOH solution.The mass loss of silicon wafer is 16.92; after corrosion,however,the mass loss of silicon wafer with zirconium silicate thin film is only 0.56;.

Key words: Zirconium silicate thin film was prepared via sol-gel method using zirconium oxychloide as zirconium source and tetraethyl orthosilicate as silicon source.The effects of hydrogen peroxide (H2O2)on the preparation of zirconium silicate film and the corrosion resistance of zirconium silicate film were investigated by means of SEM,DTA-TG,FT-IR and XRD,respectively.The results show that appropriate hydrogen peroxide effectively accelerates the hydrolysis of the zirconium oxychloide and overcomes the holes and poor densification caused by weight loss at high temperature.When the mole ratio of H2O2/Zr is less than 2,uniform and dense film can not be prepared.However,impurity phase appears when the mole ratio of H2O2/Zr is more than 2.Uniform and dense zirconium silicate thin film could be prepared when the optimal mole ratio of H2O2/Zr is 2.The thin film has excellent corrosion resistance against NaOH solution.The mass loss of silicon wafer is 16.92; after corrosion,however,the mass loss of silicon wafer with zirconium silicate thin film is only 0.56;.