Abstract: CdSe nanocrystalline thin films were prepared by vacuum evaporation technique on the substrate of Si (100) under the different evaporation currents.The analysis and characterization of crystallization properties and surface morphology were carried out with the aid of modern analytical techniques,including XRD,thickness testing instrument and AFM.The results show that the evaporation current significant influence on crystalline properties and morphology of CdSe thin films.When the evaporation current is 75 A,the strongest diffraction apex was on the (002) crystal face,which exhibits an obvious growth advantage of the film with the c axis orientation,the thickness of film is about 160 nm and the grain size is about 40 nm.The sample surface for 75 A is smooth and crack-free with root mean square (RMS) roughness 5.63 nm.This results shown that the crystallization of the thin film is good.

Key words: CdSe nanocrystalline thin films were prepared by vacuum evaporation technique on the substrate of Si (100) under the different evaporation currents.The analysis and characterization of crystallization properties and surface morphology were carried out with the aid of modern analytical techniques,including XRD,thickness testing instrument and AFM.The results show that the evaporation current significant influence on crystalline properties and morphology of CdSe thin films.When the evaporation current is 75 A,the strongest diffraction apex was on the (002) crystal face,which exhibits an obvious growth advantage of the film with the c axis orientation,the thickness of film is about 160 nm and the grain size is about 40 nm.The sample surface for 75 A is smooth and crack-free with root mean square (RMS) roughness 5.63 nm.This results shown that the crystallization of the thin film is good.