Abstract: Carbon doped Ti-O (C∶Ti-O) films were prepared using CO2 and O2 as carbon and oxygen source, and during the deposition Plasma Emission Monitoring (PEM) system was used to realize the closed-loop control of reaction gas and stabilize the reactive sputtering in the hysteresis transition region.The surface morphology, structure and composition of the films were characterized by AFM, Grazing Incidence X-ray Diffraction and XPS.The transmittance of the films was measured by UV-Vis spectrophotometer and the bandgap of the thin films was also calculated by Tauc mapping method.The results show that with the increase of the glow intensity set point (SP), the deposition rate and Ti-C bond content in the C∶Ti-O thin film increase, the bandgap decrease.Increasing SP can enchance the crystallinity of the film and is favorable to the formation of the rutile phase.

Key words: Carbon doped Ti-O (C∶Ti-O) films were prepared using CO2 and O2 as carbon and oxygen source, and during the deposition Plasma Emission Monitoring (PEM) system was used to realize the closed-loop control of reaction gas and stabilize the reactive sputtering in the hysteresis transition region.The surface morphology, structure and composition of the films were characterized by AFM, Grazing Incidence X-ray Diffraction and XPS.The transmittance of the films was measured by UV-Vis spectrophotometer and the bandgap of the thin films was also calculated by Tauc mapping method.The results show that with the increase of the glow intensity set point (SP), the deposition rate and Ti-C bond content in the C∶Ti-O thin film increase, the bandgap decrease.Increasing SP can enchance the crystallinity of the film and is favorable to the formation of the rutile phase.