Abstract: The prepared sulfur-contained precursors based on sputtering method were sulfurized by different time-temperature profiles during the sulfurization process , and the effect of different time-temperature profiles on CZTS films were investigated by charactering roughness , compactness and homogenous of the CZTS surface .From the SEM results , the grain size of the CZTS gradually increase with slowing the heating rate .Although the large grain size can reduce the grain boundaries , the large grains deteriorate flatness of the CZTS surface .The phases of the film were determined by measuring the composition , crystallization and phase composition , it is indicate that the film is belong to Cu-poor and Zn-rich kesterite phase .The optical and electrical properties of the CZTS films were characterized by measuring the corresponding CZTS film samples without Mo layer .Finally, the CZTS cells with the SLG/Mo/CZTS/CdS/i-ZnO/AZO/Ni/Al-grid structure were fabricated .And the best cell with the efficiency of 3.60;is obtained.

Key words: The prepared sulfur-contained precursors based on sputtering method were sulfurized by different time-temperature profiles during the sulfurization process , and the effect of different time-temperature profiles on CZTS films were investigated by charactering roughness , compactness and homogenous of the CZTS surface .From the SEM results , the grain size of the CZTS gradually increase with slowing the heating rate .Although the large grain size can reduce the grain boundaries , the large grains deteriorate flatness of the CZTS surface .The phases of the film were determined by measuring the composition , crystallization and phase composition , it is indicate that the film is belong to Cu-poor and Zn-rich kesterite phase .The optical and electrical properties of the CZTS films were characterized by measuring the corresponding CZTS film samples without Mo layer .Finally, the CZTS cells with the SLG/Mo/CZTS/CdS/i-ZnO/AZO/Ni/Al-grid structure were fabricated .And the best cell with the efficiency of 3.60;is obtained.