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JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (12): 2211-2220.

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Research Progress in Antimonide-Based Type-II Superlattice Multi-Color Infrared Detectors

JIANG Dongwei1,2,3, XU Yingqiang1,2,3, WANG Guowei1,2,3, NIU Zhichuan1,2,3   

  1. 1. State Key Laboratory for Supperlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. Centre for Antimonide Narrow-Bandgap Semiconductors(CANS), Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
  • Online:2020-12-15 Published:2021-01-25

Abstract: In recent years, Type-Ⅱ InAs/GaSb superlattice infrared detectors have experienced significant developments in material growth quality, device structural designs, and imaging applications. Especially for multi-color infrared detection, type-Ⅱ superlattice has several fundamental properties such as tunable band gap, low dark current, high quantum efficiency, high uniformity, and low cost, that makes it the preferred material for the third-generation infrared detection technology. In this paper, recent advances in antimonide multi-color detectors at the Center for Antimonide Narrow-Bandgap Semiconductors have been reported. Development of a variety of high-performance multi-color infrared detectors with low noise, high quantum efficiency and low optical crosstalk, such as short/mid, short/long, mid/long, long/long, and mid/long/very long multi-color infrared detectors were successfully realized.

Key words: InAs/GaSb, Type-Ⅱ superlattice, multi-color infrared detector, quantum efficiency, optical crosstalk

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