Progress in MBE Growth of HgCdTe at Kunming Institute of Physics

Abstract

Abstract: HgCdTe(MCT) has dominated the high performance end of the IR detector market for decades. Owing to many merits, including the possibility of using low cost alternative substrates such as Ge and Si, precisely energy band structure control, and device structure grown, molecular beam epitaxy(MBE) growth of MCT has become the main tool for fabricating third generation IR focal plane arrays(FPA). Recent progress in MBE growth of MCT at Kunming Institute of Physics (KIP) is reported, including results in structure design, crystalline quality control, surface macro-defect control, cut-off wavelength and thickness uniformity control, doping control. For MCT on alternative and CdZnTe substrate, the maximum size are 4-inch(10.16 cm) and 2.5 cm×2.5 cm, the EPD are around 1×10⁶ cm^-2 and in the range of (3~30)×10⁴ cm^-2, the macro-defect density are around 30 cm^-2 and between (1~3)×10² cm^-2, respectively. Single color MWIR 2 048×2 048 detector, SWIR 2 048×2 048 detector, dual-band S-MWIR 640×512 detector, and dual-band M-MWIR 320×256 FPA detector are fabricated and demonstrated using MBE MCT.

Key words: molecular beam epitaxy(MBE), HgCdTe, CdZnTe substrate, alternative substrate, IR dector

CLC Number:

TN215

KONG Jincheng, LI Yanhui, YANG Chunzhang, YANG Jin, QIN Gang, CHEN Weiye, CHEN Xiaoxuan, REN Yang, WANG Shanli, HU Xu, WANG Xiangqian, LI Xiongjun, ZHAO Jun. Progress in MBE Growth of HgCdTe at Kunming Institute of Physics[J]. Journal of Synthetic Crystals, 2020, 49(12): 2221-2229.

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