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JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (12): 2274-2281.

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Preparation and Properties of CuInS2 Quantum Dot-Sensitized ZnO Based Photoanode

XIA Donglin1, GUO Jinhua2   

  1. 1. State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, China;
    2. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
  • Online:2020-12-15 Published:2021-01-25

Abstract: Pure ZnO nanorods and Y-doped ZnO nanorods (ZnO∶Y) were prepared on conductive glass (FTO) substrate by two-step method. ZnO/CuInS2 and ZnO∶Y/CuInS2 photoanodes were fabricated by successive ionic layer adsorption and reaction (SILAR), respectively. The crystal phase structure, micro-morphology, chemical composition, light absorption performance and solar cell efficiency of different photoanode samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometer(EDS), ultraviolet visible spectrophotometer (UV-Vis) and current density-voltage (J-V) curves and other technical means. The experimental results show that the prepared ZnO nanorods and ZnO∶Y nanorods have a hexagonal wurtzite structure. The optical band gap of the CuInS2 quantum dot-sensitized ZnO nanorod films reduce from 3.22 eV to 2.98 eV. Compared with ZnO/CuInS2 photoanode solar cell, the short-circuit current density and photoelectric conversion efficiency of ZnO∶Y/CuInS2 photoanodes solar cell increase by 6.5% and 50.4%, respectively.

Key words: quantum dot-sensitized solar cell, ZnO photoanode, yttrium doped ZnO nanorod, CuInS2 quantum dot, successive ionic layer adsorption and reaction method

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