Growth-sector Dependence of Irradiated Defects in High-temperature and High-pressure Synthetic Boron-doped Diamond

JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (2): 217-221.

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Growth-sector Dependence of Irradiated Defects in High-temperature and High-pressure Synthetic Boron-doped Diamond

WANG Kaiyue;DING Senchuan

Online:2020-02-15 Published:2021-01-20

Abstract

CLC Number:

V254.2

WANG Kaiyue;DING Senchuan. Growth-sector Dependence of Irradiated Defects in High-temperature and High-pressure Synthetic Boron-doped Diamond[J]. Journal of Synthetic Crystals, 2020, 49(2): 217-221.

Growth-sector Dependence of Irradiated Defects in High-temperature and High-pressure Synthetic Boron-doped Diamond

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