Research Progress on Preparation and Application of Silicon Nanowires

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (9): 1743-1751.

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Research Progress on Preparation and Application of Silicon Nanowires

HU Dewei;TANG Anjiang;TANG Shiyun;WEI Deju;TIAN Hexin

Online:2020-09-15 Published:2021-01-20

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HU Dewei;TANG Anjiang;TANG Shiyun;WEI Deju;TIAN Hexin. Research Progress on Preparation and Application of Silicon Nanowires[J]. Journal of Synthetic Crystals, 2020, 49(9): 1743-1751.

[1]	WANG Liguang, RUI Yang, SHENG Wang, MA Yinshuang, MA Cheng, CHEN Weinan, ZOU Qipeng, DU Pengxuan, HUANG Liuqing, LUO Xuetao. Influence Mechanism of Crucible Rotation Rates on the Flow Field and Oxygen Concentration of the Semiconductor-Grade Czochralski Monocrystalline Silicon Melt under Transverse Magnetic Field [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(9): 1641-1650.
[2]	HOU Shaohua, ZHANG Hongshuai, JIANG Baozhu, ZHU Binbin, TIAN Zengguo. Broken Edge Prediction in the Equal-Diameter Growth Process of Cz Single Crystal Silicon Based on ISOMAP-DE-SVM [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(1): 25-33.
[3]	LIN Guangwei, WANG Shan, ZHANG Xiya, GAO Junwei, GAO Dedong. Optimal Design and Analysis of Heating System of Czochralski Single Crystal Furnace [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(8): 1541-1551.
[4]	ZHAO Yan;ZUO Dun-wen;SUN Yu-li;WANG Min. Research on the Influence of Ambient Temperature on Material Removal Rate of Germanium Wafer in Low Temperature Polishing [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2015, 44(3): 587-592.
[5]	JIN Chao-hua;ZHU Tong. Numerical Simulation on the Effect of the Rotating on the Heat Transfer and Melt Flow during the Silicon Crystal Growth Process by Cz Method [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2015, 44(1): 31-37.
[6]	GAO Zhan-jun;CHEN Zhi-ming;LI Lian-bi;ZHAO Meng;HUANG Lei. Growth and Structural Characterization of Polycrystalline Silicon Film Pulsed on 6H-SiC Substrate by HWCVD [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2014, 43(8): 1965-1969.
[7]	LIU Xu-yan;JI Xiao-xu;WANG Ai-hua;ZHANG Shuai;QIN Yi;LI Gen-quan. Fabrication of High Ge Content SGOI by Component-controlled Ge Condensation [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2014, 43(7): 1781-1787.
[8]	CAO Li-qiang;ZHAO Bei-jun;LIU Lin. Quality Analysis of Polycrystalline Silicon Produced by Modified Siemens Process [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2013, 42(8): 1492-1497.
[9]	CHEN Qing-dong;WANG Jun-ping;LI Jie;ZHANG Yu-xiang;LU Jing-xiao. Investigation on Activation Energy of Intrinsic Microcrystalline Silicon Thin Films Deposited by VHF-PECVD [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2009, 38(6): 1424-1428.
[10]	GAO Yu;ZHOU Qi-gang;DAI Xiao-lin;XIAO Qing-hua. Numerical Analysis of the Effects of Heat Shield and Successor Heater on Heat Field of φ300mm Si Single Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2007, 36(4): 832-836.
[11]	PEI Li-zhai;TANG Yuan-hong;GUO Chi;ZHANG Yong;CHEN Yang-wen. Optical Properties of One-dimensional Silicon Nanomaterials [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2006, 35(1): 36-40.
[12]	. Intrinsic Gettering Effect in Heavily Doped CZSi Wafers [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2004, 33(5): 781-783.
[13]	Zhou Yunjuan;Song Xuemei;Wang Bo;Chen Guanghua;Yan Hui. Preparation and Electrical & Optical Properties of Doped C60 Thin Films [J]. JOURNAL OF SYNTHETIC CRYSTALS, 1999, 28(4): 359-363.

Research Progress on Preparation and Application of Silicon Nanowires

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