Research Progress of Ultra-Wide Bandgap Semiconductor β-Ga2O3

Abstract

Abstract: At the beginning of the 21st century, β-Ga₂O₃, an ultra-wide bandgap semiconductor, was researched initially in Japan. β-Ga₂O₃ wafers with different orientations were prepared by Tohoku University using floating zone technique. High-quality homoepitaxial wafers was obtained by Kyoto University which was engaged in β-Ga₂O₃ epitaxy research. Based on this substrate, the first Ga₂O₃-based MESFET device was successfully constructed by Japan National Institute of Information and Communications Technology in 2012. This work demonstrated the great potential of β-Ga₂O₃ in power devices and opened a new era of β-Ga₂O₃ research. Since then, β-Ga₂O₃ single crystals, epi-wafers and devices have attracted a lot of research institutions' attention. Recent years, with the technological progress, the upper limit of breakdown voltage of β-Ga₂O₃ power devices was repeatedly refreshed. The time line of the development of β-Ga₂O₃ single crystal, epi-wafers, devices and the research status of power devices are summarized and analyzed in this article. This paper points out the existing problems and possible solutions in the application of β-Ga₂O₃, and looks forward to its future development, and provides a reference for the future technological development of β-Ga₂O₃.

Key words: gallium oxide, crystal growth, epitaxy, power device, floating zone technique, edge-defined film-fed growth, ultra-wide bandgap semiconductor

CLC Number:

O738

WANG Xinyue, ZHANG Shengnan, HUO Xiaoqing, ZHOU Jinjie, WANG Jian, CHENG Hongjuan. Research Progress of Ultra-Wide Bandgap Semiconductor β-Ga₂O₃[J]. Journal of Synthetic Crystals, 2021, 50(11): 1995-2012.

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Research Progress of Ultra-Wide Bandgap Semiconductor β-Ga₂O₃

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