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JOURNAL OF SYNTHETIC CRYSTALS ›› 2021, Vol. 50 ›› Issue (3): 484-490.

• Research Articles • Previous Articles     Next Articles

Preparation and Electrical Properties of n-In0.35Ga0.65N/p-Si Heterojunction

WANG Ting, ZHAO Hongli, GUO Shiwei, YAO Juan, LI Shuang, FU Yuechun, SHEN Xiaoming, HE Huan   

  1. Center of Ecological Collaborative Innovation for Aluminum Industry in Guangxi, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
  • Received:2021-01-04 Online:2021-03-15 Published:2021-04-15

Abstract: InGaN film was deposited on p-Si substrate using a self-refited pulsed laser deposition (PLD) system with double laser light paths and two-component target. The microstructure of InGaN film and the electrical properties of n-InGaN/p-Si heterojunction were investigated. The results show that InGaN film exhibits a single crystal structure with [0001] preferred orientation.The surface of the film is smooth and dense, and the atomic content of In is 35%. The Hall effect measurements show that In0.35Ga0.65N film exhibits n-type characteristics with high carrier concentration, high mobility and low resistivity. The current-voltage (I-V) analysis shows that n-In0.35Ga0.65N/p-Si heterojunction has good rectification characteristics with the rectification ratio of 25 at ±4 V, and the open circuit voltage is 1.32 V. There exists two current transport mechanisms in n-In0.35Ga0.65N/p-Si heterojunction: thermally assisted carrier tunneling and recombination-tunneling mechanism. In addition, the reverse saturation current, barrier height and ideality factor of the heterojunction are 1.05×10-8A, 0.86 eV, and 6.87, respectively.

Key words: pulsed laser deposition, n-In0.35Ga0.65N/p-Si heterojunction, InGaN film, rectification characteristic, semiconductor

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