Precision Cutting Mechanism of Monocrystalline Silicon Based on Single Abrasive Micro-Scratch

Abstract

Abstract: High efficiency and precision grinding of monocrystalline silicon plays an important role in the field of microelectronics and optoelectronics manufacturing. To explore the cutting characteristics and mechanism of precision grinding of silicon wafer devices, diamond grain with triangular pyramid shape was used to scratch the surface of monocrystalline silicon under different loading pressures to simulate the grinding process. The evolution law of scratch morphology, cutting force and cutting depth were analyzed, and the micro cutting mechanism of monocrystalline silicon was explained. The critical value of microcracking removal is normal cutting force of 80 mN and critical cutting depth of 2.03 μm. The critical condition of spalling removal is normal cutting force of 800 mN and cutting depth of 5.65 μm. Cutting depth and grinding force ratio have distinct differentiation characteristics under different cutting mechanism conditions. The variation law of average cutting depth with loading pressure shows self similarity characteristics. In addition, the cutting force equations of plastic removal, micro crushing removal and spalling removal are constructed respectively, which can more accurately describe the close relationship between cutting force and cutting depth. These works are of great significance to further improve the cutting theory of monocrystalline silicon materials, and improve the manufacturing ability of semiconductor.

Key words: monocrystalline silicon, micro-scratch, precision machining, cutting mechanism, scratch morphology, cutting force

CLC Number:

TG58

WANG Long, WANG Liuying, LIU Gu, TANG Xiujian, YANG Nengjun, YOU Yinfeng, LIU Guohao. Precision Cutting Mechanism of Monocrystalline Silicon Based on Single Abrasive Micro-Scratch[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(3): 558-564.

References

[1] HAMAKAWA Y.Thirty years trajectory of amorphous and nanocrystalline silicon materials and their optoelectronic devices[J]. Journal of Non-Crystalline Solids, 2006, 352(9/10/11/12/13/14/15/16/17/18/19/20): 863-867.
[2] 勾宪芳,许颖,任丙彦,等.多晶硅太阳电池的氮化硅薄膜性能研究[J].河北工业大学学报,2005,34(5):27-30.
GOU X F, XU Y, REN B Y, et al.Thecharacteriztion of silicon niteride (SiN) thin films on multi-crystalline solar cells[J]. Journal of Hebei University of Technology, 2005, 34(5): 27-30(in Chinese)
[3] 张世强,李万河,徐品烈.硅太阳能电池的丝网印刷技术[J].电子工业专用设备,2007,36(5):55-59+68.
ZHANGSHIQIANG, LI WANHE, XU PINLIE. Silk screen printing technology of silicon solar cell[J]. Equipment for Electronic Products Manufacturing, 2007, 36(5): 55-59+68(in Chinese).
[4] WEI C C, HORNG J H, LEE A C, et al.Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads[J]. Wear, 2011, 270(3/4): 172-180.
[5] WANG Y G, ZHANG L C, BIDDUT A.Chemical effect on the material removal rate in the CMP of silicon wafers[J]. Wear, 2011, 270(3/4): 312-316.
[6] CHEN C C A, SHU L S, LEE S R. Mechano-chemical polishing of silicon wafers[J]. Journal of Materials Processing Technology, 2003, 140(1/2/3): 373-378.
[7] GAO S, HUANG H,ZHU X L, et al.Surface integrity and removal mechanism of silicon wafers in chemo-mechanical grinding using a newly developed soft abrasive grinding wheel[J]. Materials Science in Semiconductor Processing, 2017, 63: 97-106.
[8] HAAPALINNA A, NEVAS S, PÄHLER D. Rotational grinding of silicon wafers—sub-surface damage inspection[J]. Materials Science and Engineering: B, 2004, 107(3): 321-331.
[9] ZHOU P, YAN Y, HUANG N, et al.Residual stress distribution in silicon wafers machined by rotational grinding[J]. Journal of Manufacturing Science and Engineering, 2017, 139(8): 081012.
[10] 康仁科,田业冰,郭东明,等.大直径硅片超精密磨削技术的研究与应用现状[J].金刚石与磨料磨具工程,2003,23(4):13-18+25.
KANG R K, TIAN YB, GUO D M, et al. Present status of research and application in ultra-precision grinding technology of large-scale silicon wafers[J]. Diamond & Abrasives Engineering, 2003, 23(4): 13-18+25(in Chinese).
[11] MOHAJERANI A, SPELT J K.Edge chipping of borosilicate glass by blunt indentation[J]. Mechanics of Materials, 2010, 42(12): 1064-1080.
[12] GOGOTSI G A.Fracture of ceramics with different conical indenters: edge chipping[J]. Strength of Materials, 2016, 48(5): 610-614.
[13] ZHANG L C, ZARUDI I.Towards a deeper understanding of plastic deformation inmono-crystalline silicon[J]. International Journal of Mechanical Sciences, 2001, 43(9): 1985-1996.
[14] WASMER K, PARLINSKA-WOJTAN M, GRAÇA S, et al. Sequence of deformation and cracking behaviours of Gallium-Arsenide during nano-scratching[J]. Materials Chemistry and Physics, 2013, 138(1): 38-48.
[15] 毕果,许涛林,彭云峰,等.BK7光学玻璃金刚石划刻声发射信号的特征提取[J].光学精密工程,2017,25(4):934-942.
BI G, XU T L, PENG Y F, et al.Feature extraction of acoustic emission signal for diamond scratching of optical glass BK7[J]. Optics and Precision Engineering, 2017, 25(4): 934-942(in Chinese).
[16] 李淑娟,崔丹,王小雪,等.基于声发射的单晶SiC材料去除机理研究[J].人工晶体学报,2014,43(1):134-142.
LI S J, CUI D, WANG X X, et al.Study on the material removal mechanism of SiC single crystal based on acoustic emission[J]. Journal of Synthetic Crystals, 2014, 43(1): 134-142(in Chinese).
[17] 唐修检,刘谦,田欣利,等.切向载荷作用下氮化硅陶瓷崩碎损伤规律与机理[J].光学精密工程,2015,23(7):2023-2030.
TANG X J, LIU Q, TIAN X L, et al.Regulation and mechanism of edge chipping for Si₃N₄ ceramics worked by sliding loads[J]. Optics and Precision Engineering, 2015, 23(7): 2023-2030(in Chinese).
[18] 唐修检,田欣利,王望龙,等.基于能量的工程陶瓷边缘碎裂损伤规律与机理研究[J].人工晶体学报,2013,42(10):2049-2054+2058.
TANG X J, TIAN X L, WANG W L, et al.Study on fracture regulars and mechanisms of edge chipping for engineering ceramics based on energy[J]. Journal of Synthetic Crystals, 2013, 42(10): 2049-2054+2058(in Chinese).
[19] 王龙,田欣利,刘谦,等.基于微晶刚玉磨粒切削的20CrMnTi齿轮钢磨削机理研究[J].制造技术与机床,2017(6):80-84.
WANG L, TIAN X L, LIU Q, et al.Research on grinding mechanism of 20CrMnTi steel based on micro crystalline corundum grit cutting[J].Manufacturing Technology & Machine Tool, 2017(6): 80-84
(in Chinese).[20] 田欣利,王龙,王望龙,等.基于边缘破碎驱动裂纹推挤加工的破碎模拟实验研究[J].人工晶体学报,2014,43(10):2726-2731.
20 TIAN X L, WANG L, WANG W L, et al.Simulation experiments for push processing based on the edge effect to drive crack[J]. Journal of Synthetic Crystals, 2014, 43(10): 2726-2731(in Chinese).
[21] 田欣利,于爱兵.工程陶瓷加工的理论与技术[M].北京:国防工业出版社,2006.
TIAN X L, YU A B.Theory and technology of engineering ceramics processing [M]. Beijing: National Defense Industry Press, 2006.
[22] 邓朝晖,张璧,孙宗禹,等.陶瓷磨削的材料去除机理[J].金刚石与磨料磨具工程,2002,22(2):47-51.
DENGZ H, ZHANG B, SUN Z Y, et al.Study on the materials removal mechanism in ceramic grinding[J]. Diamond & Abrasives Engineering, 2002, 22(2): 47-51(in Chinese).