Research Progress of Low-Dimensional Group-VA Nanomaterials:from Structural Properties to Preparation Applications

Abstract

Abstract: The zero band gap of graphene and low carrier mobility of molybdenum disulfide hinder their applications in electronic device. The successful preparation of single-layer black phosphorous and the direct band gap, higher carrier mobility and negative poisson's ratio of phosphene make up for the shortcomings of graphene and molybdenum disulfide, which has triggered great research interests on the low-dimensional group-VA nanomaterials. It enables the rapid development of low-dimensional group-VA nanomaterials in the fields of materials science and optoelectronics. Recent research results on the low-dimensional group-VA nanomaterials are summarized in this paper. Combining theoretical calculations and experimental synthesis, relationship between the structure and performance of the materials is analyzed. Finally, the preparation methods and applications of the above materials are summarized. The low-dimensional group-VA nanomaterials exhibit a variety of crystal structures, high dynamic stability, versatile electronic structures and higher carrier mobility and other characteristics. Such properties make low-dimensional group-VA nanomaterials have a wide range of applications in low-dimensional optoelectronic devices.

Key words: low-dimensional nanomaterial, phosphorene, arsenene, antimonene, bismuthene, two-dimensional semiconductor

CLC Number:

TN304
TB383

LIU Qichao, ZHANG Hui. Research Progress of Low-Dimensional Group-VA Nanomaterials:from Structural Properties to Preparation Applications[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(3): 578-586.

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