Effect of Barrier Temperature on Internal Quantum Efficiency in InGaN Quantum Dots/Quantum Well Hybrid Structure

Abstract

Abstract: Three InGaN/GaN quantum wells: S₁ (830 ℃), S₂ (840 ℃) and S₃ (850 ℃) with different barrier temperatures were grown by metal organic chemical vapor deposition (MOCVD). Due to the formation of high-density V-shaped pits, the perfect quantum well structure was destroyed and transformed into InGaN quantum dots (QDs)/quantum well (QW) hybrid structure. Atomic force microscopy (AFM), high-angle annular dark-field imaging (HAADF) and energy dispersive spectrometer (EDS) were employed to analyze the morphology and related causes of the three samples. The changes of quantum confined Stark effect (QCSE), nonradiative recombination center density and carrier localization effect at different barrier temperatures were analyzed by EPDD-PL(excitation power density dependent photoluminescence) and TD-PL(temperature dependent photoluminescence). The results show that QCSE is weaker at lower barrier temperature, because at lower temperature, the V-shaped pits are deeper, inducing more obvious stress release and lower the residual strain. With the increase of barrier growth temperature, the density of nonradiative recombination centers increase gradually. The internal quantum efficiency (IQE) of S₁, S₂ and S₃ samples decrease with the increase of barrier growth temperature. Finally, it is found that the enhancement of QCSE and the higher density of nonradiative recombination centers are the main factors for the decrease of IQE with the increase of barrier growth temperature.

Key words: quantum dot/quantum well hybrid structure, V-shaped pit, QCSE, nonradiative recombination center, IQE, MOCVD

CLC Number:

TB321
O471.1

PING Chen, JIA Zhigang, DONG Hailiang, ZHANG Aiqin, XU Bingshe. Effect of Barrier Temperature on Internal Quantum Efficiency in InGaN Quantum Dots/Quantum Well Hybrid Structure[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(5): 809-815.

References

[1] HORIUCHI N. Natural white light[J]. Nature Photonics, 2011, 4(11): 738.
[2] MORKOÇ H. Handbook of nitride semiconductors and devices, materials properties, physics and growth[J]. Journal of Nervous & Mental Disease, 2008, 184(7): 440.
[3] FENG M X, LIU J P, ZHANG S M, et al. Design considerations for GaN-based blue laser diodes with InGaN upper waveguide layer[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4): 1500705.
[4] NARUKAWA Y, ICHIKAWA M, SANGA D, et al. White light emitting diodes with super-high luminous efficacy[J]. Journal of Physics D: Applied Physics, 2010, 43(35): 354002.
[5] MUKAI T, YAMADA M, NAKAMURA S. Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes[J]. Japanese Journal of Applied Physics, 1999, 38(Part 1, No. 7A): 3976-3981.
[6] JIANG Y, LI Y, LI Y, et al. Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range[J]. Sci Rep, 2015, 5: 10883.
[7] SAITO S, HASHIMOTO R, HWANG J, et al. InGaN light-emitting diodes onc-face sapphire substrates in green gap spectral range[J]. Applied Physics Express, 2013, 6(11): 111004.
[8] SINGH R, DOPPALAPUDI D, MOUSTAKAS T D, et al. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition[J]. Applied Physics Letters, 1997, 70(9): 1089-1091.
[9] MUKAI T, YAMADA M, NAKAMURA S. Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes[J]. Japanese Journal of Applied Physics, 1998, 37(Part 2, No. 11B): L1358-L1361.
[10] DE S M, LAYEK A, BHATTACHARYA S, et al. Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes[J]. Applied Physics Letters, 2012, 101(12): 121919.
[11] NAKAMURA. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes[J]. Science, 1998, 281(5379): 955-961.
[12] 吴东旭,郑学军,程宏斌,等.不同生长方向的GaN纳米线的可控制备与性能表征[J].人工晶体学报,2015,44(2):389-393.
WU D X, ZHENG X J, CHENG H B, et al. Controlled fabrication and performance characterization of oriented GaN nanowires[J]. Journal of Synthetic Crystals, 2015, 44(2): 389-393(in Chinese).
[13] PARK S H, AHN D, KOO B H, et al. Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency[J]. Applied Physics Letters, 2009, 95(6): 063507.
[14] PARK I K, KWON M K, KIM J O, et al. Green light-emitting diodes with self-assembled In-rich InGaN quantum dots[J]. Applied Physics Letters, 2007, 91(13): 133105.
[15] PARK S H, HONG W P, KIM J J. Characteristics of built-in polarization potentials in vertically and laterally arranged InGaN/GaN quantum dots[J]. Journal of Applied Physics, 2012, 112(12): 123107.
[16] WENG G E, ZHAO W R, CHEN S Q, et al. Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green[J]. Nanoscale Research Letters, 2015, 10(1): 1-7.
[17] WEIDLICH P H, SCHNEDLER M, EISELE H, et al. Evidence of deep traps in overgrown V-shaped defects in epitaxial GaN layers[J]. Applied Physics Letters, 2013, 103(6): 062101.
[18] LIN F, XIANG N, CHEN P, et al. Investigation of the V-pit related morphological and optical properties of InGaN/GaN multiple quantum wells[J]. Journal of Applied Physics, 2008, 103(4): 043508.
[19] CHO H K, LEE J Y, YANG G M, et al. Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density[J]. Applied Physics Letters, 2001, 79(2): 215-217.
[20] SHARMA N, THOMAS P, TRICKER D, et al. Chemical mapping and formation of V-defects in InGaN multiple quantum wells[J]. Applied Physics Letters, 2000, 77(9): 1274-1276.
[21] STRINGFELLOW G B. Microstructures produced during the epitaxial growth of InGaN alloys[J]. Journal of Crystal Growth, 2010, 312(6): 735-749.
[22] YOUNG N G, FARRELL R M, OH S, et al. Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes[J]. Applied Physics Letters, 2016, 108(6): 061105.
[23] WANG H N, JI Z W, QU S, et al. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells[J]. Optics Express, 2012, 20(4): 3932-3940.
[24] LIN Y S, MA K J, HSU C, et al. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells[J]. Applied Physics Letters, 2000, 77(19): 2988-2990.
[25] LU T, MA Z, DU C, et al. Temperature-dependent photoluminescence in light-emitting diodes[J]. Sci Rep, 2014, 4: 6131.
[26] CHO Y H, GAINER G H, FISCHER A J, et al. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells[J]. Applied Physics Letters, 1998, 73(10): 1370-1372.
[27] BIXON M, JORTNER J, VERHOEVEN J W. Lifetimes for radiative charge recombination in donor-acceptor molecules[J]. Journal of the American Chemical Society, 1994, 116(16): 7349-7355.
[28] DENG Z, JIANG Y, MA Z G, et al. Correction: Corrigendum: a novel wavelength-adjusting method in InGaN-based light-emitting diodes[J]. Scientific Reports, 2014, 4: 4150.
[29] LIU L, WANG L, LI D, et al. Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures[J]. Journal of Applied Physics, 2011, 109(7): 073106.
[30] NGO T H, GIL B, VALVIN P, et al. Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures[J]. Applied Physics Letters, 2015, 107(12): 122103.
[31] HUGUES M, DAMILANO B, DUBOZ J Y, et al. Exciton dissociation and hole escape in the thermal photoluminescence quenching of(Ga, In)(N, As)quantum wells[J]. Physical Review B, 2007, 75(11): 115337.
[32] HWANG J S, GOKARNA A, CHO Y H, et al. Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates[J]. Applied Physics Letters, 2007, 90(13): 131908.
[33] DAI Q, SCHUBERT M F, KIM M H, et al. Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities[J]. Applied Physics Letters,2009,94(11):248.