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JOURNAL OF SYNTHETIC CRYSTALS ›› 2021, Vol. 50 ›› Issue (6): 1056-1061.

• Research Articles • Previous Articles     Next Articles

Effect of Post Annealing Atmosphere on β-Ga2O3 Thin Films Prepared by Magnetron Sputtering

JI Kaidi1, GAO Cancan1, YANG Fashun1,2,3, XIONG Qian1, MA Kui1,2,3   

  1. 1. Department of Electronics, Guizhou University, Guiyang 550025, China;
    2. Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, China;
    3. Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education, Guiyang 550025, China
  • Received:2021-04-02 Online:2021-06-15 Published:2021-07-08

Abstract: In recent years, β-Ga2O3 has attracted more and more attention as a wide band gap semiconductor material. A large number of researchers all over the world have carried out a lot of studies in preparation, doping and etching of β-Ga2O3. Radio frequency magnetron sputtering is one of the most popular methods for preparing β-Ga2O3 thin film. And post annealing is usually used to improve the quality of the film. In this paper, effects of annealing temperature and annealing atmosphere on β-Ga2O3 thin films on C-plane sapphire substrate prepared by radio frequency magnetron sputtering were investigated. Testing results of XRD and AFM indicate that under nitrogen atmosphere, the quality of β-Ga2O3 films annealed at 1 000 ℃ is better. At the same temperature, oxygen atmosphere annealing is better than nitrogen atmosphere annealing to improve the crystallization properties and reduce the surface roughness of the films. And under oxygen atmosphere, the quality of films annealed at 1 000 ℃ is better than that annealed at 900 ℃.

Key words: wide band gap semiconductor, β-Ga2O3, radio frequency magnetron sputtering, annealing atmosphere, crystallization property, surface roughness

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