Study on Surface Quality of β-Ga2O3 Crystal Cut by Diamond Wire Saw

Abstract

Abstract: In this paper, the effect of the process parameters of reciprocating diamond wire saw on the surface quality of the (001) plane β-Ga₂O₃ single crystal was investigated. According to the theory of the indentation fracture mechanics, the abrasive behavior and material removal mechanism in the process of cutting β-Ga₂O₃ single crystal with diamond wire saw were investigated. The influence of the cutting direction on the surface quality of the (001) plane β-Ga₂O₃ single crystal was analyzed from the aspect of anisotropy, SEM and SJ-210 roughness measuring instrument were used to explore the effect of process parameters on the quality of wafer surface after diamond wire saw. The experimental results show that the depth of subsurface damage layer can be reduced and the surface quality of the wafer can be effectively improved by increasing the wire speed or decreasing the feed rate.

Key words: β-gallium oxide wafer, diamond wire saw, cutting direction, subsurface damage layer, surface roughness

CLC Number:

TQ133.5

LI Hui, GAO Pengcheng, CHENG Hongjuan, WANG Yingmin, GAO Fei, ZHANG Chi, WANG Lei. Study on Surface Quality of β-Ga₂O₃ Crystal Cut by Diamond Wire Saw[J]. Journal of Synthetic Crystals, 2022, 51(12): 2040-2047.

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Study on Surface Quality of β-Ga₂O₃ Crystal Cut by Diamond Wire Saw

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