JOURNAL OF SYNTHETIC CRYSTALS ›› 2022, Vol. 51 ›› Issue (12): 2153-2163.
• Reviews • Previous Articles Next Articles
WAN Yanli, TIAN Tingfang, ZHANG Zhenwei
Received:2022-06-15
Online:2022-12-15
Published:2023-01-09
| [1] HSIANG E L, YANG Z, YANG Q, et al. Prospects and challenges of mini-LED, OLED, and micro-LED displays[J]. Journal of the Society for Information Display, 2021, 29(4/6): 446-465. [2] HUANG Y G, TAN G J, GOU F W, et al. Prospects and challenges of mini-LED and micro-LED displays[J]. Journal of the Society for Information Display, 2019, 27(7): 387-401. [3] LEE S L, CHENG C C, LIU C J, et al. 9.4-inch 228-ppi flexible micro-LED display[J]. Journal of the Society for Information Display, 2021, 52(2): 1040-1043. [4] LU B, WANG Y, HYUN B R, et al. Color difference and thermal stability of flexible transparent InGaN/GaN multiple quantum wells mini-LED arrays[J]. IEEE Electron Device Letters, 2020, 41(7): 1040-1043. [5] ZHAO C, LI W, YAN G W, et al. Application of micro-LED in visible light communication[C]. Wuhan: International Conference on Display Technology, 2020. [6] 潘祚坚,陈志忠,焦 飞,等.面向显示应用的微米发光二极管外延和芯片关键技术综述[J].物理学报,2020,69(19):70-93+383. PAN Z J, CHEN Z Z, JIAO F, et al. A review of key technologies for epitaxy and chip process of micro light-emitting diodes in display application[J]. Acta Physica Sinica, 2020, 69(19): 70-93+383(in Chinese). [7] JIN S X, LI J, LI J Z, et al. GaN microdisk light emitting diodes[J]. Applied Physics Letters, 2000, 76(5): 631-633. [8] DAY J, LI J, LIE D Y C, et al. Ⅲ-Nitride full-scale high-resolution microdisplays[J]. Applied Physics Letters, 2011, 99(3): 031116. [9] TEMPLIER F. GaN-based emissive microdisplays: a very promising technology for compact, ultra-high brightness display systems[J]. Journal of the Society for Information Display, 2016, 24(11): 669-675. [10] OLIVIER F, DAAMI A, L DUPRÉ, et al. Investigation and improvement of 10 μm pixel-pitch GaN-based micro-LED arrays with very high brightness[J]. SID Symposium Digest of Technical Papers, 2017, 48(1):353-356. [11] ZHANG X, QI L, CHONG W C, et al. Late-news paper: high-resolution monolithic micro-LED full-color micro-display[C]//SID Symposium Digest of Technical Papers, John Wiley & Sons Ltd, 2020. [12] BAE J, SHIN Y, YOO H, et al. Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit[J]. Nature Communications, 2022, 13: 1862. [13] JIANG H X, JIN S X, LI J, et al. Ⅲ-nitride blue microdisplays[J]. Applied Physics Letters, 2001, 78(9): 1303-1305. [14] JEON C W, CHOI H W, DAWSON M D. A novel fabrication method for a 64 × 64 matrix-addressable GaN-based micro-LED array[J]. Physica Status Solidi (A) Applied Research, 2003, 200(1): 79-82. [15] CHOI H W, JEON C W, DAWSON M D. Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique[J]. Journal of Crystal Growth, 2004, 268(3/4): 527-530. [16] 梁静秋,李 佳,王维彪.LED阵列的设计和制作工艺研究[J].液晶与显示,2006,21(6):604-608. LIANG J Q, LI J, WANG W B. Design and fabrication of AlGaInP LED array[J]. Chinese Journal of Liquid Crystals and Displays, 2006, 21(6): 604-608(in Chinese). [17] JEON C W, KIM K S, DAWSON M D. Fabrication of two-dimensional InGaN-based micro-LED arrays[J]. Physica Status Solidi, 2015, 192(2): 325-328. [18] 杨洪宝,昌永龙,王健波,等.高亮单色硅基LED微显示器件的制作[J].光电子技术,2017,37(2):119-123+135. YANG H B, CHANG Y L, WANG J B, et al. The fabrication of high light monochrome LED micro-display on silicon[J]. Optoelectronic Technology, 2017, 37(2): 119-123+135(in Chinese). [19] CHEN C J, CHEN H C, LIAO J H, et al. Fabrication and characterization of active-matrix 960×540 blue GaN-based micro-LED display[J]. IEEE Journal of Quantum Electronics, 2019, 55(2): 1-6. [20] HUANG H H, HUANG S K, TSAI Y L, et al. Investigation on reliability of red micro-light emitting diodes with atomic layer deposition passivation layers[J]. Optics Express, 2020, 28(25): 38184-38195. [21] AMELIE D, PATRICK L M, HELGE H, et al. Full InGaN red (625 nm) micro-LED (10 m) demonstration on a relaxed pseudo-substrate[J]. Applied Physics Express, 2021, 14(9): 092011. [22] OH J T, LEE S Y, MOON Y T, et al. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures[J]. Optics Express, 2018, 26(9): 11194-11200. [23] KAWAGUCHI Y, HUANG C Y, WU Y R, et al. Semipolar (2021-) single-quantum-well red light-emitting diodes with a low forward voltage[J]. Japanese Journal of Applied Physics, 2013, 52(8S): 08 JC08. [24] PIENIAK K, CHLIPALA M, TURSKI H, et al. Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction[J]. Optics Express, 2021, 29(2): 1824-1837. [25] WONG M S, KEARNS J A, LEE C M, et al. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments[J]. Optics Express, 2020, 28(4): 5787-5793. [26] ZHAO Y Z, LIANG J Q, ZENG Q H, et al. 2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off[J]. Optics Express, 2021, 29(13): 20217-20228. [27] HSIANG E L, LI Y, HE Z Q, et al. Enhancing the efficiency of color conversion micro-LED display with a patterned cholesteric liquid crystal polymer film[J]. Nanomaterials, 2020, 10(12): 2430. [28] HORNG R H, CHIEN H Y, TARNTAIR F G, et al. Fabrication and study on red light micro-LED displays[J]. IEEE Journal of the Electron Devices Society, 6: 1064-1069. [29] 赵晨静,于 跃,代锦飞,等.基于钙钛矿量子点的电致发光二极管研究进展[J].科学通报,2021,66(17):2139-2150. ZHAO C J, YU Y, DAI J F, et al. Advances on perovskite quantum dot electroluminescent devices[J]. Chinese Science Bulletin, 2021, 66(17): 2139-2150(in Chinese). [30] MENG W Q, XU F F, YU Z H, et al. Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix[J]. Nature Nanotechnology, 2021, 16(11): 1231-1236. [31] HWANGBO S, HU L, HOANG A T, et al. Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor[J]. Nature Nanotechnology, 2022, 17(5): 500-506. [32] 蒋府龙,许非凡,刘召军,等.氮化镓基Micro-LED显示技术研究进展[J].人工晶体学报,2020,49(11):2013-2023. JIANG F L, XU F F, LIU Z J, et al. Development of GaN-based micro-LED display technology[J]. Journal of Synthetic Crystals, 2020, 49(11): 2013-2023(in Chinese). [33] 宋 蓉,黎 颖,魏旭冉,等.全无机钙钛矿量子点的光学研究进展[J].包装学报,2020,12(3):16-25. SONG R, LI Y, WEI X R, et al. Research progress in optics of all-inorganic perovskite quantum dots[J]. Packaging Journal, 2020, 12(3): 16-25(in Chinese). [34] CHENG Y J, LO J C C, QIU X, et al. Quantum dot film patterning on a trenched glass substrate for defining pixel arrays of a full-color mini/micro-LED display[C]//2020 21 st International Conference on Electronic Packaging Technology (ICEPT). Guangzhou, China. IEEE: 1-3. [35] LIN H Y, SHER C W, HSIEH D H, et al. Optical cross-talk reduction in a quantumdot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold[J]. Photonics Research, 2017, 5(5): 411-416. [36] LI X H, KUNDALIYA D, TAN Z J, et al. Projection lithography patterned high-resolution quantum dots/thiol-ene photo-polymer pixels for color down conversion[J]. Optics Express, 2019, 27(21): 30864-30874. [37] ZI Y L, WING C C, XU Z, et al. Synthesis and conversion efficiency optimization of quantum dots layer for full-color micro-LED display[J]. Chinese Journal of Luminescence, 2022, 43(3): 421-429. [38] LEE C T, CHENG C J, LEE H Y, et al. Color conversion of GaN-based micro light-emitting diodes using quantum dots[J]. IEEE Photonics Technology Letters, 2015, 27(21): 2296-2299. [39] HAN H V, LIN H Y, LIN C C, et al. Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology[J]. Optics Express, 2015, 23(25): 32504-32515. [40] LI P A, ZHANG X, LI Y F, et al. Monolithic full-color microdisplay using patterned quantum dot photoresist on dual-wavelength LED epilayers[J]. Journal of the Society for Information Display, 2020, 29: 157-165. [41] SUN W C, LI F, TAO J, et al. Micropore filling fabrication of high resolution patterned PQDs with a pixel size less than 5 μm[J]. Nanoscale, 2022, 14(16): 5994-5998. [42] WANG L, ZHU Y Y, LIU H, et al. Giant stability enhancement of CsPbX3 nanocrystal films by plasma-induced ligand polymerization[J]. ACS Applied Materials & Interfaces, 2019, 11(38): 35270-35276. [43] LIU D, WENG K K, LU S Y, et al. Direct optical patterning of perovskite nanocrystals with ligand cross-linkers[J]. Science Advances, 2022, 8(11): eabm8433. [44] WANG W, GUO R, XIONG X, et al. Improved stability and efficiency of perovskite via a simple solid diffusion method[J]. Materials Today Physics, 2021, 18: 100374. [45] GONG C K, WANG X F, XIA X F, et al. In-situ guanidinium bromide passivation treatment of CsPbBr3 perovskite quantum dots exhibiting high photoluminescence and environmental stability[J]. Applied Surface Science, 2021, 559: 149986. [46] PENG D, ZHANG K, CHAO V S D, et al. Full-color pixelated-addressable light emitting diode on transparent substrate (LEDoTS) micro-displays by CoB[J]. Journal of Display Technology, 2016, 12(7): 742-746. [47] MEITL M A, RADAUSCHER E, ROTZOLL R, et al. Emissive displays with transfer-printed microscale inorganic LEDs[J]. SID Symposium Digest of Technical Papers, 2017, 48(1): 257-263. [48] CHANG M K, JUN Y L, DUK J K, et al. Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding[J].ACS Photonics 2018, 5 (11): 4413-4422. [49] ROBIN Y, BAE S Y, SHUBINA T V, et al. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes[J]. Scientific Reports, 2018, 8: 7311. [50] EL-GHOROURY H S, YEH M, CHEN J C, et al. Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers[J]. AIP Advances, 2016, 6(7): 075316. [51] LEE M L, YEH Y H, TU S J, et al. White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal Pyramids[J]. Optics Express, 2015, 23(7): A401-A412. [52] FUNATO M, HAYASHI K, UEDA M, et al. Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells[J]. Applied Physics Letters, 2008, 93(2): 021126. [53] YAMANO K, KISHINO K. Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication[J]. Applied Physics Letters, 2018, 112(9): 091105. [54] ICHIKAWA S, SHIOHMI K, MORIKAWA T, et al. Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut[J]. Appl Phys Express, 2021,14(3): 31008. [55] LIU Z J, CHONG W C, WONG K M, et al. A novel BLU-free full-color LED projector using LED on silicon micro-displays[J]. IEEE Photonics Technology Letters, 2013, 25(23): 2267-2270. [56] CHONG W C, WONG K M, LIU Z J, et al. A novel full-color 3LED projection system using R-G-B light emitting diodes on silicon (LEDoS) micro-displays[J]. SID Symposium Digest of Technical Papers, 2013, 44(1): 838-841. |
| [1] | WU Shiting, YU Chunyan, FANG Jiaqing, XU Yang, ZHAI Guangmei. Intermediate Shell Structure Regulation and Optical Properties of ZnSe Based Blue Quantum Dots [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(7): 1160-1169. |
| [2] | MA Yulin, GUO Xiang, DING Zhao. Research Progress on the Preparation and Application of GaAsBi Semiconductor Materials [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(1): 25-37. |
| [3] | ZHAO Junyi, LIU Runze, LOU Yiyang, HUO Yongheng. Basic Materials and Devices of the Deterministic Solid-State Quantum Light Sources [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 960-981. |
| [4] | SONG Changkun, HUANG Xiaoying, CHEN Yingxin, YU Ying, YU Siyuan. Modulation of Semiconductor Single Quantum Dots Using Molecular Beam Epitaxy [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 982-996. |
| [5] | WANG Jun, GE Qing, LIU Shuaicheng, MA Bojie, LIU Zhuoliang, ZHAI Hao, LIN Feng, JIANG Chen, LIU Hao, LIU Kai, YANG Yisu, WANG Qi, HUANG Yongqing, REN Xiaomin. Investigation of Epitaxial III-V Quantum Well and Quantum Dot Lasers on Silicon for Monolithic Integration [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 766-782. |
| [6] | CAI Xin, XU Yu, CAO Bing, XU Ke. Sidewall Damage and Optical Properties of Micro-LED [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 812-817. |
| [7] | LIU Xiaohui, LIU Jingtao, GUO Yingnan, WANG Ying, GUO Qinglin, LIANG Baolai, WANG Shufang, FU Guangsheng. Optical Properties of InGaAs/GaAs Surface Quantum Dots Regulated by Introducing a Si Doped Interlayer [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(1): 73-82. |
| [8] | ZHANG Bo, LIN Mingyu, SUN Shuyan, LUO Xinze. SiW12 Cooperating with CsPbI3 to Improve the Photoelectric Conversion Efficiency of TiO2 Nanotubes [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(6): 1034-1041. |
| [9] | PING Chen, JIA Zhigang, DONG Hailiang, ZHANG Aiqin, XU Bingshe. Effect of Barrier Temperature on Internal Quantum Efficiency in InGaN Quantum Dots/Quantum Well Hybrid Structure [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(5): 809-815. |
| [10] | WANG Xinwei, CHE Zhiyuan, ZHANG Xing, LI Lingwei, ZHANG Wei, SU Shi, MA Jinwen. Controllable Preparation and Photoelectrochemical Performance of TiO2 Thin Film with Different Morphology [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(3): 516-522. |
| [11] | LI Jiayao, HAN Weijie, YANG Zhouping, SHI Yangfan, LU Shiping, LIU Xinmei. Synthesis of Potato-Based Carbon Quantum Dots, Mn Doping and Their Application in Ag+ Detection [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(11): 2093-2102. |
| [12] | XIA Donglin, GUO Jinhua. Preparation and Properties of CuInS2 Quantum Dot-Sensitized ZnO Based Photoanode [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(12): 2274-2281. |
| [13] | WANG Yi, DING Zhao, WEI Jiemin, YANG Chen, LUO Zijiang, WANG Jihong, GUO Xiang. Nucleation and Diffusion of In Atom on GaAs(001) Surface [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(12): 2268-2273. |
| [14] | CAO Min-chi;LIU Yang;HOU Shu-xin;CHEN Chun-run;XU Teng;HE Jing;YANG Shuang;WANG Hao-ran;LI Xin-hong;LIU Yue-li. Study on the Gas Sensing Properties of PbS Quantum Dots/MoO3 Nanobelts at Low Temperature [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2017, 46(8): 1480-1486. |
| [15] | ZHAO Fei;YANG Wen;CHEN Xiao-bo;YUAN Jun-bao;YANG Pei-zhi. Influence of Substrate Temperature on the Structure and Optical Properties of SiCx Thin Films Contained Silicon Quantum Dots [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2016, 45(8): 2044-2049. |
| Viewed | ||||||
|
Full text |
|
|||||
|
Abstract |
|
|||||
E-mail Alert
RSS