Mechanism of Phase Change Temperature of VO2 Thin Films by Doping Germanium

Abstract

Abstract: As a new type of reversible phase change material, vanadium dioxide (VO₂) has shown great potential in development with the regulation of its phase change temperature (T_MIT) and were extensively studied. The experiment in this study focuses on exploring the effect of germanium ions on T_MIT of VO₂ thin films and trying to explain the internal mechanism. A series of VO₂ films containing different ratios of germanium ions were deposited on polished alumina sheets. The characterization results show that germanium ions contribute to increasing T_MIT (maximum T_MIT is 84.7 ℃). The main reason for this increase is that germanium ion enhances the stability of monoclinic V-V dimer by increasing the stability of monoclinic V-V dimer, which makes the transition from low-temperature monoclinic state to tetragonal rutile state more difficult.

Key words: vanadium dioxide, thin film, phase change temperature, germanium dioxide, lattice distortion, electrical property, V-V dimer

CLC Number:

O484
TB383.2

CUI Jinghe, JIANG Quanwei, GAO Mangmang, LIANG Sen. Mechanism of Phase Change Temperature of VO₂ Thin Films by Doping Germanium[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 666-672.

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Mechanism of Phase Change Temperature of VO₂ Thin Films by Doping Germanium

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