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JOURNAL OF SYNTHETIC CRYSTALS ›› 2022, Vol. 51 ›› Issue (6): 1051-1058.

Special Issue: 钙钛矿单晶与薄膜材料

• Research Articles • Previous Articles     Next Articles

Simulation of Lead-Based Halide Perovskite Solar Cells

XIAO Jianmin1, YUAN Jiren1,2, WANG Peng1, DENG Xinhua1, HUANG Haibin2,3, ZHOU Lang2   

  1. 1. School of Physics and Materials, Nanchang University, Nanchang 330031, China;
    2. Institute of Photovoltaics, Nanchang University, Nanchang 330031, China;
    3. HAC General Semitech Co., Ltd., Jiujiang 332020, China
  • Received:2022-02-28 Online:2022-06-15 Published:2022-07-18

Abstract: The multiple sulfides Cd0.5Zn0.5S and cuprous oxide Cu2O have high carrier mobility, and their production processes are simpler than that of the traditional electron transport layer and hole transport layer. Therefore, these two materials have very good application potential in perovskite solar cells. The solar cells with Cd0.5Zn0.5S and Cu2O as the transmission layer and lead-based halide perovskites as the absorption layer were simulated using SCAPS-1D software. The influence of material thickness, doping concentration and bandgap on the perovskite solar cells performance was studied. The results show that as the thickness of the absorber layer (CH3NH3PbI3) increases, the cells performance gradually improves, but when it increases to a certain thickness, the cells performance decreases. The optimal thickness of the absorber layer is 400 nm. Moreover, when the defect state density of the absorbing layer is less than 1.0×1014 cm-3, the defect state density has little influence on the cells performance. In addition, the bandgap of the absorber has important influence on the cells performance, and the best bandgap is about 1.5 eV. The best performance parameters for this solar cells are obtained as an open-circuit voltage of 1.010 V, a short-circuit current density of 31.30 mA/cm2, a fill factor of 80.01%, and a conversion efficiency of 25.20%. Therefore, the Cu2O/CH3 NH3PbI3/Cd0.5Zn0.5S halide solar cell is a photovoltaic device with great development potential.

Key words: Cd0.5Zn0.5S, Cu2O, lead-based halide, halide solar cell, conversion efficiency, SCAPS-1D, defect state density

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