Research Progress on Preparation of Two-Dimensional Transition Metal Dichalcogenides by CVD

Abstract

Abstract: Two-dimensional transition metal dichalcogenides (TMDs) are a new type of two-dimensional materials after graphene. Due to their unique physical and chemical properties, much attention has been attracted in semiconductors, optoelectronic materials, energy storage, and catalytic hydrogen production. Chemical vapor deposition (CVD) is currently one of the processes suitable for realizing large-scale preparation of two-dimensional materials. Due to the highly controllable parameters of CVD process, it has great advantages in the preparation of two-dimension materials. In this paper, the recent research progress on preparation of TMDs by CVD is reviewed, and the influence of various factors on the growth and final morphology of the products in CVD preparation process, including precursors, temperature, substrate, auxiliaries, pressure and carrier gas are discussed. Some improved CVD processes are listed and their characteristics are also summarized. Finally, challenges and prospects for the development of TMDs prepared by CVD are discussed.

Key words: transition metal dichalcogenide, chemical vapor deposition, salt-assisted chemical vapor deposition, metal-organic chemical vapor deposition, two-dimensional material, precursor, influence factor

CLC Number:

TB34

WANG Dong, WEI Zijian, ZHANG Qian, XIA Yueqing, ZHANG Xiuli, WANG Tianhan, YUAN Zhihua, LAN Mingming. Research Progress on Preparation of Two-Dimensional Transition Metal Dichalcogenides by CVD[J]. Journal of Synthetic Crystals, 2023, 52(1): 156-169.

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