Optical and Electrical Properties of Ni-Doped β-Ga2O3 Single Crystal

Abstract

Abstract: Ni-doped β-Ga₂O₃ single crystals were grown by edge-defined film-fed growth (EFG) method, and the crystal structure and quality were verified by powder X-ray diffraction (PXRD) and Laue diffraction. The effect of Ni²⁺ doping on optical properties of β-Ga₂O₃ was investigated by UV-Vis-NIR transmission spectra and infrared transmission spectra. It is found that the ultraviolet cut-off edge of (100) plane is 252.9 nm and corresponding optical bandgap is 4.74 eV. Furthermore, the broadband near-infrared luminescent property of Ni-doped β-Ga₂O₃ was discovered by cathodoluminescence (CL) spectroscopy in the range from 600 nm to 800 nm, which is expected to broaden the application of β-Ga₂O₃ crystal in broadband near-infrared.

Key words: Ga₂O₃, wide-bandgap semiconductor, optical and electrical property, broadband near-infrared luminescent, EFG method, Ni doping

CLC Number:

CHEN Shaohua, MU Wenxiang, ZHANG Jin, DONG Xuyang, LI Yang, JIA Zhitai, TAO Xutang. Optical and Electrical Properties of Ni-Doped β-Ga₂O₃ Single Crystal[J]. Journal of Synthetic Crystals, 2023, 52(8): 1373-1377.

References

[1] NAKAGOMI S, MOMO T, TAKAHASHI S, et al. Deep ultraviolet photodiodes based on β-Ga₂O₃/SiC heterojunction[J]. Applied Physics Letters, 2013, 103(7): 072105.
[2] KIM J, OH S, MASTRO M A, et al. Exfoliated β-Ga₂O₃ nano-belt field-effect transistors for air-stable high power and high temperature electronics[J]. Physical Chemistry Chemical Physics: PCCP, 2016, 18(23): 15760-15764.
[3] GALAZKA Z, GANSCHOW S, FIEDLER A, et al. Doping of Czochralski-grown bulk β-Ga₂O₃ single crystals with Cr, Ce and Al[J]. Journal of Crystal Growth, 2018, 486: 82-90.
[4] MU W X, JIA Z T, CITTADINO G, et al. Ti-doped β-Ga₂O₃: a promising material for ultrafast and tunable lasers[J]. Crystal Growth & Design, 2018, 18(5): 3037-3043.
[5] LI P K, HAN X L, CHEN D Y, et al. Effect of air annealing on the structural, electrical, and optical properties of V-doped β-Ga₂O₃ single crystals[J]. Journal of Alloys and Compounds, 2022, 908: 164590.
[6] SUZUKI T, SENTHIL MURUGAN G, OHISHI Y. Spectroscopic properties of a novel near-infrared tunable laser material Ni∶MgGa₂O₄[J]. Journal of Luminescence, 2005, 113(3/4): 265-270.
[7] 张嗣春, 夏海平, 王金浩, 等. Ni²⁺掺杂近化学计量比铌酸锂晶体的生长及光谱特性[J]. 光学学报, 2008, 28(1): 138-142.
ZHANG S C, XIA H P, WANG J H, et al. Growth and optical properties of near-stoichiometric Ni²⁺-doped lithium niobate crystal[J]. Acta Optica Sinica, 2008, 28(1): 138-142 (in Chinese).
[8] 张印东. Ni²⁺掺杂微晶玻璃近红外宽带发光调控研究[D]. 哈尔滨: 哈尔滨工程大学, 2020.
ZHANG Y D. Study on near-infrared broadband luminescence regulation of Ni²⁺ doped glass-ceramics[D]. Harbin: Harbin Engineering University, 2020 (in Chinese).
[9] XIAO W Z, WANG L L, XU L, et al. Electronic structure and magnetic interactions in Ni-doped β-Ga₂O₃ from first-principles calculations[J]. Scripta Materialia, 2009, 61(5): 477-480.
[10] GALAZKA Z, IRMSCHER K, SCHEWSKI R, et al. Czochralski-grown bulk β-Ga₂O₃ single crystals doped with mono-, di-, tri-, and tetravalent ions[J]. Journal of Crystal Growth, 2020, 529: 125297.
[11] 付博. 导模法柱状β-Ga₂O₃单晶生长、缺陷及性能研究[D]. 济南: 山东大学, 2022.
FU B. Study on growth, defects and properties of columnar β-Ga₂O₃ single crystal by guided mode method[D]. Jinan: Shandong University, 2022 (in Chinese).
[12] FU B, JIAN G Z, MU W X, et al. Crystal growth and design of Sn-doped β-Ga₂O₃: morphology, defect and property studies of cylindrical crystal by EFG[J]. Journal of Alloys and Compounds, 2022, 896: 162830.
[13] GALAZKA Z, IRMSCHER K, UECKER R, et al. On the bulk β-Ga₂O₃ single crystals grown by the Czochralski method[J]. Journal of Crystal Growth, 2014, 404: 184-191.
[14] 穆文祥. β-Ga₂O₃单晶的生长、加工及性能研究[D]. 济南: 山东大学, 2018.
MU W X. Growth, processing and properties of β-Ga₂O₃ single crystal.[D]. Jinan: Shandong University, 2018 (in Chinese).
[15] 赵靖. 3d过渡金属离子(Mn²⁺, Fe³⁺, Ni²⁺)发光的影响因素研究[D]. 合肥: 合肥工业大学, 2021.
ZHAO J. Study on influence factors of 3d transition metal ions (Mn²⁺, Fe³⁺, Ni²⁺) luminescence[D]. Hefei: Hefei University of Technology, 2021 (in Chinese).

Optical and Electrical Properties of Ni-Doped β-Ga₂O₃ Single Crystal

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments

[1]	CHEN Hongming, FAN Shengqi, SONG Qi, JIANG Ling, CHEN Yongjun, LI Jianbao, ZHANG Xueyan. Preparation of Ni-Doped Mo₂C/C Bifunctional Catalysts and Their Performance in Electrolytic Water Splitting [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2025, 54(1): 158-164.
[2]	ZHONG Qiongli, WANG Xu, MA Kui, YANG Fashun. Effect of Al Doping on the Optical Properties of β-Ga₂O₃ Thin Films [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1352-1360.
[3]	HE Xiaomin, TANG Peizheng, LIU Ruoqi, SONG Xinyang, HU Jichao, SU Han. Simulation Study on Frequency Characteristics of AlN/β-Ga₂O₃ HEMT [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1361-1368.
[4]	HE Xiaomin, TANG Peizheng, ZHANG Hongwei, ZHANG Zhao, HU Jichao, LI Qun, PU Hongbin. Simulation on DC Characteristics of AlN/β-Ga₂O₃ HEMT [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(5): 766-772.
[5]	CHEN Peiran, JIAO Teng, CHEN Wei, DANG Xinming, DIAO Zhaoti, LI Zhengda, HAN Yu, YU Han, DONG Xin. Fabrication and Characteristics of p-Si/n-Ga₂O₃ Heterojunction [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(1): 73-81.
[6]	LI Xinru, HOU Tong, MA Xu, WANG Pei, LI Yang, MU Wenxiang, JIA Zhitai, TAO Xutang. Study on the Influence of Miscut-Angle on the Processing of β-Ga₂O₃ (100) Plane Substrate [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(9): 1570-1575.
[7]	GAO Yan, DONG Haitao, ZHANG Xiaoke, FENG Wenran. First-Principle Study on Structure, Electronic and Optical Properties of (Al_xGa_1-x)₂O₃ [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(9): 1674-1680.
[8]	LI Zongping, CHENG Dameng. Stress Field Analysis of Diamond Wire Sawing β-Ga₂O₃ Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(8): 1378-1385.
[9]	WANG Zhengpeng, ZHANG Chongde, SUN Xinyu, HU Tiancheng, CUI Mei, ZHANG Yijun, GONG Hehe, REN Fangfang, GU Shulin, ZHANG Rong, YE Jiandong. MOCVD Epitaxy of β-Ga₂O₃ Films on Off-Cut Angled Sapphire Substrates and Fabrication of Solar-Blind Ultraviolet Photodetector [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 1007-1015.
[10]	TAN Li, ZHANG Jun, ZHANG Min, ZHAO Rongli, DENG Chaoyong, CUI Ruirui. β-(Al_xGa_1-x)₂O₃ Thin Films with Tunable Band Gap Prepared by High Temperature Diffusion [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(2): 281-288.
[11]	MU Wenxiang, JIA Zhitai, TAO Xutang. Growth and Properties of 4 Inch β-Ga₂O₃ Single Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(9-10): 1749-1754.
[12]	ZHAO Xin, LIU Fenhong, ZHANG Xiaodong, LIU Changlong. Influence of Oxygen Flow Rate on the Photoluminescence Properties of Ga₂O₃∶Cr Thin Films Prepared by RF Magnetron Sputtering [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(8): 1353-1360.
[13]	LUO Yueting, XIAO Li, CHEN Yuanhao, LIANG Changxing, GONG Hengxiang. Gallium Oxide Thin Film Prepared by Atomization-Assisted Chemical Vapor Deposition [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(7): 1163-1168.
[14]	CAI Wenwei, LIU Xiangwei, WANG Hao, WANG Jianyuan, ZHENG Licheng, WANG Yongjia, ZHOU Yinghui, YANG Xu, LI Jinchai, HUANG Kai, KANG Junyong. Effect of Growth Pressure on Properties of β-Ga₂O₃ Thin Films Grown by Molecular Beam Epitaxy [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(7): 1152-1157.
[15]	WU Yuanmeng, HU Junjie, WANG Miao, YI Juemin, ZHANG Yumin, WANG Jianfeng, XU Ke. Optical Anisotropy of Non-Polar Surfaces of Fe-Doped GaN Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(6): 996-1002.