Welcome to Journal of Synthetic Crystals! Today is Aug. 8, 2025 Share:

JOURNAL OF SYNTHETIC CRYSTALS ›› 2023, Vol. 52 ›› Issue (8): 1386-1393.

• Research Articles • Previous Articles     Next Articles

Effect of Composition Step-Graded InGaN Barriers on Photoelectric Performance of Green Laser Diode

HOU Yanyu1, DONG Hailiang1,2, JIA Zhigang1,2, JIA Wei1,2, LIANG Jian3, XU Bingshe1,2,4   

  1. 1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;
    2. Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030000, China;
    3. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China;
    4. Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi′an 710021, China
  • Received:2023-01-31 Online:2023-08-15 Published:2023-08-21

Abstract: In order to investigate the influence of InxGa1-xN barrier with different indium (In) composition on photoelectric performance of green laser diode, a series of green laser diode with InxGa1-xN barrier of different In composition were simulated by SiLENSe (simulator of light emitters based on nitride semiconductors) software. The results show that the InxGa1-xN barrier structure with 3% In composition has the highest slope efficiency and the lowest internal optical loss, and also show the largest optical confinement factor and the optimum performance. Based on the multiple quantum well structure with In0.03Ga0.97N barrier, the composition step-graded (CSG) InGaN barrier model structure was designed, which effectively improves the slope efficiency and electro-optical conversion efficiency. Moreover, the optical field confinement increase. The simulation results show that at the injection current of 120 mA, the efficiency of electro-optical conversion increases from 17.7% to 19.9% for the multiple quantum well structure with CSG InGaN barrier, the slope efficiency increases from 1.09 mW/mA to 1.14 mW/mA, and the optical confinement factor increases from 1.58% to 1.62%. The study provides theoretical guidance and data support for the preparation of high-power GaN-based green laser diode.

Key words: green laser diode, photoelectric performance, In composition, composition step-graded InGaN barrier, slope efficiency, electro-optical conversion efficiency

CLC Number: