Growth and Microstructure of Er-Doped MnBi2Te4 Crystal

Abstract

Abstract: MnBi₂Te₄ is an intrinsic magnetic topological insulator discovered for the first time, which has important research significance. In this paper, Er-doped MnBi₂Te₄ crystal were synthesized by doping rare earth elements in MnBi₂Te₄ crystal. The Er atom enters the lattice and replaces the Mn site. Considering the long period of crystal preparation process and the existence of impurities such as Bi₂Te₃ flux in the product during crystal preparation, the crystal preparation process was optimized. XRD analysis shows that the Er-doped MnBi₂Te₄ crystal prepared by the optimized process has good crystallinity and no impurity phase. The magnetoelectric transport measurement results show that a small amount of Er-doped MnBi₂Te₄ crystal has enhanced magnetic properties, and the doped samples undergo antiferromagnetic phase transition at 25.2 K. The layer spacing of Er-doped MnBi₂Te₄ crystal was studied by atomic force microscopy. The layer spacing is an integral multiple of that of single-layer MnBi₂Te₄. The phonon vibration mode of Er-doped MnBi₂Te₄ crystal was studied by Raman measurement, and the results show that doping Er is a feasible method to adjust the magnetic properties of MnBi₂Te₄.

Key words: MnBi₂Te₄, antiferromagnetic topological insulator, Er doping, crystallinity, magnetic property, phonon vibration mode

CLC Number:

OU Xinlin, WANG Jin, ZHAO Ke. Growth and Microstructure of Er-Doped MnBi₂Te₄ Crystal[J]. Journal of Synthetic Crystals, 2023, 52(9): 1635-1640.

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Growth and Microstructure of Er-Doped MnBi₂Te₄ Crystal

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