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JOURNAL OF SYNTHETIC CRYSTALS ›› 2024, Vol. 53 ›› Issue (10): 1729-1737.

• Research Articles • Previous Articles     Next Articles

Preparation and Photoelectric Properties of Co3O4@BiVO4 Composite Thin Films

CONG Wenbo, PENG Shaolong, WANG Hang, LI Lihua, HUANG Jinliang   

  1. College of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471000, China
  • Received:2024-06-04 Online:2024-10-15 Published:2024-10-21

Abstract: In this paper, FTO conductive glass was used as a substrate to successfully prepare Co3O4 thin films with controlled morphology by hydrothermal method. Using the prepared Co3O4 thin films as the base, Co3O4@BiVO4 composite thin films with varying amounts of BiVO4 were successfully prepared by controlling the number of spin-coating cycles. The phase composition and microstructure were analyzed using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). Additionally, their optical absorption and photoelectric properties were measured using a UV-3600 UV-Vis spectrophotometer and an electrochemical workstation. Results indicate that, based on the XRD patterns of the Co3O4@BiVO4 composite thin films, the composite materials were successfully prepared. From the FESEM images, it can be observed that the prepared Co3O4@BiVO4 composite thin films possess a continuous, uniform, and dense surface, with the Co3O4 thin films growing uniformly as nanowires, and the spin-coated BiVO4 uniformly coating the surfaces of Co3O4 nanowires in a block-like manner. The optical absorption spectrum reveals enhanced light absorption of the Co3O4@BiVO4 composite thin films compared to pure Co3O4 thin films. Under zero bias voltage and illumination, the photoelectrical performance of the Co3O4@BiVO4 composite thin films surpasses that of pure Co3O4 thin films. Electrochemical test results demonstrate that the Co3O4@BiVO4-3 composite thin films, which were spun-coated three times, showing optimal photoelectrical performance, with a maximum photocurrent approximately 18.4 times that of pure Co3O4 thin films. The responsivity of the device is 105.5 μA/W, with a detectivity of up to 1.988×1011 Jones.

Key words: Co3O4, BiVO4, composite film, photoelectric property, photocurrent, detectivity

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