Simulation on ZnS/SnS Solar Cells with Spiro-OMeTAD as Hole Transport Layer

Abstract

Abstract: Stannous sulfide (SnS) was investigated as an absorbing layer for solar cells due to its suitable electrical and optical properties. Spiro-OMeTAD is commonly employed as a hole transport layer to enhance the performance of solar cells. The ZnS/SnS/Spiro-OMeTAD solar cell was designed and simulated by the wxAMPS software. The effects of the Spiro-OMeTAD hole transport layer on the properties of solar cells were mainly studied, namely the effects on open-circuit voltage, short-circuit current density, filling factor, photoelectric conversion efficiency and quantum efficiency. The results show that the open-circuit voltage of the ZnS/SnS/Spiro-OMeTAD solar cells increase to 0.958 V and short-circuit current increase to 32.96 mA/cm² when the Spiro-OMeTAD HTL is added. The fill factor and photoelectric conversion efficiency are 79.26% and 25.07%, respectively. The performance of the solar cells depends on the thickness of each layer, doping concentration, Gaussian defect state density, and temperature. The results demonstrate that the Spiro-OMeTAD, as a hole transport layer, is beneficial for enhancing various performance aspects of solar cells. Moreover, the ZnS/SnS/Spiro-OMeTAD exhibits a great potential as a photovoltaic device structure.

Key words: stannous sulfide, zinc sulphur, Spiro-OMeTAD, hole transport layer, heterojunction solar cell, wxAMPS, defect

CLC Number:

TM914.4

TANG Huazhu, XIAO Qingquan, FU Shasha, XIE Quan. Simulation on ZnS/SnS Solar Cells with Spiro-OMeTAD as Hole Transport Layer[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1394-1408.

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