Abstract: Carbon nitride films have been deposited on Si and Pt substances by microwave plasma chemical vapor deposition (MPCVD). For films deposited on Si substrates, SEM observations showed that polycrystalline films were formed. The nitrogen to carbon ratio was in the range of 1.0-2.0. XRD experiments with films on both Si and Pt substrate showed that the films consisted of crystal phases of α-and β-C3N4. Detailed XPS peak profile analysis showed that the carbon and nitrogen atoms in the films were mainly bound together in single bond covalent C-N bonds. IR spectra also showed characteristic peaks of β-C3N4. Strong evidence shows that crystalline carbon nitride films have been synthesized.

Key words: Carbon nitride films have been deposited on Si and Pt substances by microwave plasma chemical vapor deposition (MPCVD). For films deposited on Si substrates, SEM observations showed that polycrystalline films were formed. The nitrogen to carbon ratio was in the range of 1.0-2.0. XRD experiments with films on both Si and Pt substrate showed that the films consisted of crystal phases of α-and β-C3N4. Detailed XPS peak profile analysis showed that the carbon and nitrogen atoms in the films were mainly bound together in single bond covalent C-N bonds. IR spectra also showed characteristic peaks of β-C3N4. Strong evidence shows that crystalline carbon nitride films have been synthesized.