Abstract: The [100]-oriented texture growth diamond films on (100) mirror polished Si have been achieved by microwave plasma chemical vapor deposition (MPCVD) system. The film morphology, phase composition and IR properties were studied by using SEM, Raman spectroscopy and IR transmission spectroscopy. These film properties were compared with respect to the different nucleation and deposition parameters. Results show that the negative field bias between plasma and substrate assisted oriented nucleation and H+ ions etch processing not only improved diamond film [100] oriented growth but also etched off non-diamond phase which formed during the nucleation period. For this reason, the diamond film has better IR transmission after having two hours H+ ions etching during the film deposition process.

Key words: The [100]-oriented texture growth diamond films on (100) mirror polished Si have been achieved by microwave plasma chemical vapor deposition (MPCVD) system. The film morphology, phase composition and IR properties were studied by using SEM, Raman spectroscopy and IR transmission spectroscopy. These film properties were compared with respect to the different nucleation and deposition parameters. Results show that the negative field bias between plasma and substrate assisted oriented nucleation and H+ ions etch processing not only improved diamond film [100] oriented growth but also etched off non-diamond phase which formed during the nucleation period. For this reason, the diamond film has better IR transmission after having two hours H+ ions etching during the film deposition process.