Abstract: 3C-SiC(100)films with preferred orientation were grown on Si (100) substrates by low-pressure chemical vapor deposition (LPCVD). The rocking curves of the SiC (200) peaks show that the crystalline quality of the films is improved with increasing temperature of propane introduction (abbreviated Tgi). Representative Selected area electron diffraction (SAED) patterns show that the film carbonized at higher Tgi has more preferable orientation than that carbonized at relatively low Tgi. Defects (stacking faults) were observed through the typical high resolution transmitted electron microscopy (HRTEM) image in the film. Field emission scanning electron microscopy (FESEM) images indicate that the surface morphologies of the films vary with increasing Tgi.

Key words: 3C-SiC(100)films with preferred orientation were grown on Si (100) substrates by low-pressure chemical vapor deposition (LPCVD). The rocking curves of the SiC (200) peaks show that the crystalline quality of the films is improved with increasing temperature of propane introduction (abbreviated Tgi). Representative Selected area electron diffraction (SAED) patterns show that the film carbonized at higher Tgi has more preferable orientation than that carbonized at relatively low Tgi. Defects (stacking faults) were observed through the typical high resolution transmitted electron microscopy (HRTEM) image in the film. Field emission scanning electron microscopy (FESEM) images indicate that the surface morphologies of the films vary with increasing Tgi.