Abstract: N-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering using a pure zinc disk as target and Ar-N2-O2 mixture as sputtering gas. The effects of substrate temperature on the structural, electrical and optical characteristics of the ZnO films were studied by XRD, Hall effect measurement and UV-vis transmittance spectra, respectively. The results of XRD indicate that all the thin films had a preferred orientation with the c-axis perpendicular to the substrates,and the crystalline quality of the films was improved as the substrate temperature increased. Hall effect measurements show that the resistivity of the p-type ZnO thin films is dependent on the substrate temperature during deposition. The resistivity of the thin film grown at 400℃ had a minimum resistivity of 8.44 Ω·cm due to its higher mobility (1.32cm2/Vs) and hole concentration (5.58 × 1017cm-3).