Abstract: A thermodynamic model for molecular beam epitaxy(MBE) growth of InGaP/GaAs heterostructures was established that considers two key factors, intrinsic strain due to the lattice mismatch and the desorption of InP. The derivation of the model is presented as well as comparisons with existing experimental data. The calculation results of this model indicated that the interactions among growth temperature, In/Ga flux ratio and alloy composition during the growth of InGaP which accord with the experimental data. The model is also available for other vapor deposition methods.

Key words: A thermodynamic model for molecular beam epitaxy(MBE) growth of InGaP/GaAs heterostructures was established that considers two key factors, intrinsic strain due to the lattice mismatch and the desorption of InP. The derivation of the model is presented as well as comparisons with existing experimental data. The calculation results of this model indicated that the interactions among growth temperature, In/Ga flux ratio and alloy composition during the growth of InGaP which accord with the experimental data. The model is also available for other vapor deposition methods.