[1] |
ZHANG Yumin;WANG Jianfeng;CAI Demin;XU Yu;WANG Mingyue;HU Xiaojian;XU Lin;XU Ke.
Progress on GaN Single Crystal Substrate Grown by Hydride Vapor Phase Epitaxy
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 1970-1983.
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[2] |
JIANG Yuanxi;LIU Nanliu;ZHANG Fabi;WANG Qi;ZHANG Guoyi.
Development and Trends of GaN Single Crystal Substrate Fabrication Technology
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2038-2045.
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[3] |
FENG Gan;SUN Yongqiang;QIAN Weining;CHEN Zhixia.
Progress in Homoepitaxial Growth of 4H-SiC Semiconductor
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2128-2138.
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[4] |
CHENG Hongjuan;JIN Lei;WU Honglei;QI Haitao;WANG Zenghua;SHI Yuezeng;ZHANG Li.
Growth Behavior of AlN Single Crystal
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2200-2205.
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[5] |
HU Jichao;WANG Xi;JIA Renxu;PU Hongbin;CHEN Zhiming.
New Type of Triangular Defects in 4H-SiC 4°Off-Axis Homoepitaxial Layers
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2206-2210.
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[6] |
HU Dewei;TANG Anjiang;TANG Shiyun;WEI Deju;TIAN Hexin.
Research Progress on Preparation and Application of Silicon Nanowires
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(9): 1743-1751.
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[7] |
LIU Huan;ZHU Ruzhong;GONG Jianchao;WANG Qikun;FU Danyang;LEI Dan;HUANG Jiali;WU Liang.
Effect of High Temperature Annealing on Sapphire-based Aluminum Nitride Templates Fabricated by DC Reactive Magnetron Sputtering
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(8): 1541-1547.
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[8] |
ZHOU Hao;XU Yu;CAO Bing;XU Ke;WANG Chinhua.
Orientation Evolution Study of Epitaxial GaN Films on Graphene
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(5): 794-798.
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[9] |
LIU Bing;PU Hongbin;ZHAO Ran;ZHAO Ziqiang;BAO Huiqiang;LI Longyuan;LI Jin;LIU Sujuan.
Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(4): 570-575.
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[10] |
JIN Guo;ZHU Qingzhi.
Study on the Application of p-type GaSb Window Layer in Thermophotovoltaic Cells
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(4): 638-645.
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[11] |
LAN Tianping;BIAN Yiwu;ZHOU Chunfeng;SONG Yu.
Study on EL2 Concentration Optimization of VGF Semi-insulating Gallium Arsenide Single Crystal
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(3): 412-416.
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[12] |
HE Haiying;FENG Qiuyu;CHEN Yu;YANG Zhihao.
First-principles Study on Mg-N Cation-anion Co-doped SnO2
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(2): 234-238.
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[13] |
WANG Xi-qiu;ZHUANG Wen-chang;ZHANG Kai-hui;FU Bo;JIA Zhi-tai;LUO Xin-ze.
Preparation of Ga2O3 Nanowires by Chemical Vapor Deposition
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2019, 48(12): 2174-2178.
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[14] |
HE Guang-dong;WANG Qi-kun;LEI Dan;GONG Jian-chao;HUANG Jia-li;FU Dan-yang;WU Liang.
Characterization of 1 inch AlN Single Crystal Wafers Grown by PVT Method
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2019, 48(9): 1604-1607.
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[15] |
NIU Nan-nan;ZUO Ran.
Quantum Chemistry Study on Surface Adsorption in MOCVD Growth of AlN
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2019, 48(7): 1268-1274.
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