Abstract: Silicon oxycarbide (SiOC) thin films were fabricated on Si (100) and glass substrates by radio frequency (RF) magnetron sputtering technique.They were also characterized by scanning electron microscope (SEM), X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy as well as UV-Vis spectroscopy.The component, transmittance and optical band gap of the films deposited under different sputtering pressures were also studied.The results show inside of thin films, the component of sp3 band, transmittance and optical band gap both increase follow the sputtering pressure's increase.The sp3 band and its wide gap σ band have a great influence on the optical band gap of films which is 2.67 eV when the sputtering pressure equal 3.0 Pa.

Key words: Silicon oxycarbide (SiOC) thin films were fabricated on Si (100) and glass substrates by radio frequency (RF) magnetron sputtering technique.They were also characterized by scanning electron microscope (SEM), X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy as well as UV-Vis spectroscopy.The component, transmittance and optical band gap of the films deposited under different sputtering pressures were also studied.The results show inside of thin films, the component of sp3 band, transmittance and optical band gap both increase follow the sputtering pressure's increase.The sp3 band and its wide gap σ band have a great influence on the optical band gap of films which is 2.67 eV when the sputtering pressure equal 3.0 Pa.