Abstract: In this paper , graphite/a-Si/Al and graphite/Al/a-Si laminated structures were prepared on graphite substrate by magnetron sputtering , and systematically studied the effects of the samples annealed by conventional annealing ( CTA) and rapid annealing ( RTA) .The poly-Si thin films were characterized by means of X-ray diffraction (XRD), Raman spectroscopy (Raman), and the grain size was calculated by the Scherrer formula , which show that the samples with strong preferred ( 111 ) orientation and high crystallization quality are ideal for epitaxial growth poly-Si thick film cells.At the same time, we established the AIC model to explain the mechanism in the inverted AIC process .

Key words: In this paper , graphite/a-Si/Al and graphite/Al/a-Si laminated structures were prepared on graphite substrate by magnetron sputtering , and systematically studied the effects of the samples annealed by conventional annealing ( CTA) and rapid annealing ( RTA) .The poly-Si thin films were characterized by means of X-ray diffraction (XRD), Raman spectroscopy (Raman), and the grain size was calculated by the Scherrer formula , which show that the samples with strong preferred ( 111 ) orientation and high crystallization quality are ideal for epitaxial growth poly-Si thick film cells.At the same time, we established the AIC model to explain the mechanism in the inverted AIC process .