Study on the Luminescence Properties of Ge-doped β-Ga2O3 Crystals

Abstract

Abstract: Ge-doped β-Ga2O3 crystals were grown by the Floating Zone (FZ) method,and the doping effects on the crystal structures were investigated by XRD and Raman spectroscopy.The optical transmission spectra revealed that the optical bandgaps of Ge∶ β-Ga2O3 crystals increase with the increase of Ge doping concentration.Under ultra-violet excitation of 4.67 eV,the emission intensities of Ge∶ β-Ga2O3 crystals are comparable to β-Ga2O3 crystal,while the decay time is faster.

Key words: Ge-doped β-Ga2O3 crystals were grown by the Floating Zone (FZ) method,and the doping effects on the crystal structures were investigated by XRD and Raman spectroscopy.The optical transmission spectra revealed that the optical bandgaps of Ge∶ β-Ga2O3 crystals increase with the increase of Ge doping concentration.Under ultra-violet excitation of 4.67 eV,the emission intensities of Ge∶ β-Ga2O3 crystals are comparable to β-Ga2O3 crystal,while the decay time is faster.

CLC Number:

HE Nuotian;TANG Huili;LIU Bo;ZHANG Hao;ZHU Zhichao;ZHAO Hengyu;XU Jun. Study on the Luminescence Properties of Ge-doped β-Ga2O3 Crystals[J]. Journal of Synthetic Crystals, 2020, 49(8): 1534-1540.

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Study on the Luminescence Properties of Ge-doped β-Ga2O3 Crystals

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