Development of New-Generation SiC Power MOSFET

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (11): 2122-2127.

Special Issue: 宽禁带半导体晶体与器件

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Development of New-Generation SiC Power MOSFET

BAI Song;LI Shiyan;FEI Chenxi;LIU Qiang;JIN Xiaoxing;HAO Fengbin;HUANG Runhua;YANG Yong

Online:2020-11-15 Published:2021-01-20

Abstract

CLC Number:

O734
TN386

BAI Song, LI Shiyan, FEI Chenxi, LIU Qiang, JIN Xiaoxing, HAO Fengbin, HUANG Runhua, YANG Yong. Development of New-Generation SiC Power MOSFET[J]. Journal of Synthetic Crystals, 2020, 49(11): 2122-2127.

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Development of New-Generation SiC Power MOSFET

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