Table of Content

15 November 2020, Volume 49 Issue 11

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Large Lattice-Mismatched Heteroepitaxial Growth of Nitride Wide Bandgap Semiconductors by MOCVD

SHEN Bo;YANG Xuelin;XU Fujun

2020, 49(11):  1953-1969. 

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Progress on GaN Single Crystal Substrate Grown by Hydride Vapor Phase Epitaxy

ZHANG Yumin;WANG Jianfeng;CAI Demin;XU Yu;WANG Mingyue;HU Xiaojian;XU Lin;XU Ke

2020, 49(11):  1970-1983. 

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Growth and Device Application of GaN Three-Dimensional Structure

WANG Xun;WANG Lai;HAO Zhibiao;LUO Yi;SUN Changzheng;HAN Yanjun;XIONG Bing;WANG Jian;LI Hongtao

2020, 49(11):  1984-1995. 

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Current Status and Future Trends of GaN-Based Blue and Green Laser Diodes

LI Fangzhi;HU Lei;TIAN Aiqin;JIANG Lingrong;ZHANG Liqun;LI Deyao;IKEDA Masao;LIU Jianping;YANG Hui

2020, 49(11):  1996-2012. 

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Development of GaN-Based Micro-LED Display Technology

JIANG Fulong;XU Feifan;LIU Zhaojun;LIU Bin;ZHENG Youdou

2020, 49(11):  2013-2023. 

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Liquid Phase Growth of GaN Single Crystal

REN Guoqiang;LIU Zongliang;LI Tengkun;XU Ke

2020, 49(11):  2024-2037. 

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Development and Trends of GaN Single Crystal Substrate Fabrication Technology

JIANG Yuanxi;LIU Nanliu;ZHANG Fabi;WANG Qi;ZHANG Guoyi

2020, 49(11):  2038-2045. 

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AlGaN Based Wide Bandgap Photoelectric Materials and Devices

BEN Jianwei;SUN Xiaojuan;JIANG Ke;CHEN Yang;SHI Zhiming;ZANG Hang;ZHANG Shanli;LI Dabing;LYU Wei

2020, 49(11):  2046-2067. 

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AlGaN Quantum Structures and Application for Ultraviolet Emission Devices

LI Jinchai;GAO Na;LIN Wei;CAI Duanjun;HUANG Kai;LI Shuping;KANG Junyong

2020, 49(11):  2068-2078. 

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Research Progress of AlGaN Based Deep Ultraviolet Light Emitting Diodes

WU Feng;DAI Jiangnan;CHEN Changqing

2020, 49(11):  2079-2097. 

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Investigation on the Growth and Physical Properties of AlN Nanostructures

LIU Mengting;HAN Jiecai;WANG Xianjie;SONG Bo

2020, 49(11):  2098-2121. 

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Development of New-Generation SiC Power MOSFET

BAI Song, LI Shiyan, FEI Chenxi, LIU Qiang, JIN Xiaoxing, HAO Fengbin, HUANG Runhua, YANG Yong

2020, 49(11):  2122-2127. 

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Progress in Homoepitaxial Growth of 4H-SiC Semiconductor

FENG Gan, SUN Yongqiang, QIAN Weining, CHEN Zhixia

2020, 49(11):  2128-2138. 

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Research Progress of MPCVD Single Crystal Diamond Growth and Diamond Electronic Devices

WANG Yanfeng, WANG Hongxing

2020, 49(11):  2139-2152. 

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Progress of Technological Innovation of SnSe Thermoelectric Semiconductor Crystal Growth

BAI Xudong, HU Haoyang, JIANG Jun, LI Rongbin, SHEN Hui, XU Jiayue, JIN Min

2020, 49(11):  2153-2160. 

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Research on Performance and Application of Silicon Based Golden Light LED Device

GUO Xing, WANG Guangxu, XU Longquan, XIONG Xinhua, YANG Junning, ZHANG Jianli, JIANG Fengyi

2020, 49(11):  2161-2168. 

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High-Performance Vertical GaN-on-GaN Rectifiers

YANG Shu, HAN Shaowen, LI Yanjun, LI Shaocheng, SHENG Kuang

2020, 49(11):  2169-2177. 

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Epitaxial Growth and Characterizations of Si1－xGex Alloys on Si Substrate

YUAN Ziyuan, PAN Rui, XIA Shunji, WEI Lian, YE Jiajia, LI Chen, CHEN Yanfeng, LU Hong

2020, 49(11):  2178-2193. 

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High Qualityβ-Ga₂O₃ Single Crystal and Fabrication of Schottky Diode

ZHANG Jin, HU Zhuangzhuang, MU Wenxiang, TIAN Xusheng, FENG Qian, JIA Zhitai, ZHANG Jincheng, TAO Xutang, HAO Yue

2020, 49(11):  2194-2199. 

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Growth Behavior of AlN Single Crystal

CHENG Hongjuan, JIN Lei, WU Honglei, QI Haitao, WANG Zenghua, SHI Yuezeng, ZHANG Li

2020, 49(11):  2200-2205. 

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New Type of Triangular Defects in 4H-SiC 4°Off-Axis Homoepitaxial Layers

HU Jichao;WANG Xi;JIA Renxu;PU Hongbin;CHEN Zhiming

2020, 49(11):  2206-2210. 

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