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JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (11): 2128-2138.

Special Issue: 宽禁带半导体晶体与器件

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Progress in Homoepitaxial Growth of 4H-SiC Semiconductor

FENG Gan;SUN Yongqiang;QIAN Weining;CHEN Zhixia   

  • Online:2020-11-15 Published:2021-01-20

CLC Number: