Properties of Quantum Dot Light Emitting Diode Using NiO as Hole Transport Layer

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2018, Vol. 47 ›› Issue (3): 556-563.

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Properties of Quantum Dot Light Emitting Diode Using NiO as Hole Transport Layer

GUO Qi-ling;LI Jing-ling;HE Xin-hua;XU Xue-qing

Online:2018-03-15 Published:2021-01-20

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GUO Qi-ling;LI Jing-ling;HE Xin-hua;XU Xue-qing. Properties of Quantum Dot Light Emitting Diode Using NiO as Hole Transport Layer[J]. Journal of Synthetic Crystals, 2018, 47(3): 556-563.

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Properties of Quantum Dot Light Emitting Diode Using NiO as Hole Transport Layer

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