Numerical Simulation of Monolayer n-Type MoS2/p-Type c-Si Heterojunction Solar Cells

Abstract

Abstract: Monolayer MoS₂ is a promising semiconductor material for solar energy conversion application because of its excellent optoelectronic properties. In this study, monolayer n-type MoS₂/p-type c-Si heterojunction solar cell was proposed and simulated using AMPS software. The different factors influenced the photovoltaic performance of the solar cell were studied. The simulation results show that the solar cell can achieve the highest conversion efficiency of 22.1% with the electron affinity of n-type MoS₂ is 3.75 eV, the doping concentration of n-type MoS₂ is 10¹⁸ cm^-3, and the doping concentration of p-type c-Si is 10¹⁷ cm^-3. Finally, the influence of interface states at the n-type MoS₂/p-type c-Si heterointerface on the overall performance of solar cell is simulated. It is found that the interface state density over 10¹¹ cm^-2·eV^-1 will seriously affect the photovoltaic performance of solar cell.

Key words: MoS₂, c-Si, heterojunction solar cell, conversion efficiency, two-dimensional material, numerical simulation

CLC Number:

CHEN Yun, CAI Houdao. Numerical Simulation of Monolayer n-Type MoS₂/p-Type c-Si Heterojunction Solar Cells[J]. Journal of Synthetic Crystals, 2020, 49(12): 2287-2291.

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Numerical Simulation of Monolayer n-Type MoS₂/p-Type c-Si Heterojunction Solar Cells

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